Results 81 to 90 of about 220,832 (286)
Advanced Functional Materials, EarlyView.A 3D nanowire‐network SERS substrate with robust adhesion is developed, featuring pronounced z‐direction optical activity, ultralow detection limit (1.5 × 10−13 M), and excellent signal uniformity (RSD < 10%). Enabled by enhanced light scattering, increased optical density of states, and structural reinforcement, the substrate demonstrates stable, high‐
Jinglai Duan +6 more
wiley +1 more source
Optimal laser-control of double quantum dots [PDF]
, 2007 Coherent single-electron control in a realistic semiconductor double quantum dot is studied theoretically. Using optimal-control theory we show that the energy spectrum of a two-dimensional double quantum dot has a fully controllable transition line.
A. Castro +6 more
core +2 more sources
Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6
Advanced Functional Materials, EarlyView.Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl +20 more
wiley +1 more source
Semiconductor Laser Multi-Spectral Sensing and Imaging
Sensors, 2010 Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging.
Han Q. Le, Yang Wang
doaj +1 more source
Generation of tuneable 589nm radiation as a Na guide star source using an optical parametric amplifier [PDF]
, 2015 We describe a 5.5W 589nm source based on a passively modelocked Nd:YVO4 laser and a multi-stage Lithium Triborate optical parametric amplifier seeded by a tuneable semiconductor laser.
Duering, M +2 more
core +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
, 2013 The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers.
Born M. +10 more
core +3 more sources
Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP [PDF]
, 1982 Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process.
Bar-Chaim, N. +5 more
core +1 more source
Advanced Functional Materials, EarlyView.AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi +9 more
wiley +1 more source
Frequency stabilization of an ultraviolet semiconductor disk laser [PDF]
, 2013 We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency
Hastie, Jennifer +2 more
core +1 more source