Results 71 to 80 of about 1,460,974 (246)

High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack

open access: yesPhotonics
Compact high-power sub-nanosecond laser pulse sources with a wavelength of 940 nm are developed and studied. A design for laser pulse sources based on a vertical stack is proposed, which includes a semiconductor laser chip and a current switch chip.
Sergey Slipchenko   +13 more
doaj   +1 more source

Loop Mirror Multi-wavelength Brillouin Fiber Laser Utilizing Semiconductor Optical Amplifier and Fiber Bragg Grating

open access: yesMATEC Web of Conferences, 2017
In this paper, the development of loop mirror multi-wavelength Brillouin fiber laser utilizing semiconductor optical amplifier and fiber Bragg grating is successfully demonstrated. A multi-wavelength BFL structure employs a single mode fiber that acts as
Idris N. A.   +5 more
doaj   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

open access: yesAdvanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko   +7 more
wiley   +1 more source

The Complex Way to Laser Diode Spectra: Example of an External Cavity Laser With Strong Optical Feedback [PDF]

open access: yes, 2005
An external cavity laser with strong grating-filtered feedback to an antireflection-coated facet is studied with a time-domain integral equation for the electric field, which reproduces the modes of the oscillation condition as steady-state solutions ...
B. TROMBORG   +4 more
core   +1 more source

A novel power stability drive system of semiconductor Laser Diode for high-precision measurement

open access: yesMeasurement + Control, 2019
In view of the strict requirements of the current high-precision measurement system for stable output power of the semiconductor LD (Laser Diode), a semiconductor LD stable power drive and multi-closed-loop control system are proposed after analyzing the
He Huang   +6 more
doaj   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam   +10 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Robust optical injection locking to a 250 MHz frequency comb without narrow-band optical pre-filtering [PDF]

open access: yes, 2011
A semiconductor laser was injection locked to a single optical frequency comb mode with a dither-free phase locked loop.
Wu, D.S.   +3 more
core   +2 more sources

Semiconductor Laser Multi-Spectral Sensing and Imaging

open access: yesSensors, 2010
Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging.
Han Q. Le, Yang Wang
doaj   +1 more source

High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin   +9 more
wiley   +1 more source

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