Results 131 to 140 of about 14,234 (351)

Linker‐Engineered Dimeric Acceptors Afford Efficient Organic Photocatalytic Hydrogen Evolution via Tailored Nanomorphology for Long‐Lived Charge Accumulation

Advanced Materials, EarlyView.
We developed a new series of monomeric (MY) and dimeric acceptors incorporating unfused (DY1) and fused (DY2) linkers, which establish a controlled self‐aggregation trend of MY > DY2 > DY1. The DY2‐based system yields a bulk‐heterojunction nanoparticle morphology that appears to balance phase separation and interfacial accessibility, consistent with ...
Jin‐Woo Lee, Cheng Sun, Yang Song, Guanru Dong, Keren Ai, Stanley Alfred Cazaly, Flurin Eisner, Bumjoon J. Kim, Zeinab Hamid, Iain McCulloch, Yun‐Hi Kim, James R. Durrant   +11 more
wiley   +1 more source

Erratum: Kinetic theory of semiconductor cascade laser based on quantum wells and wires [JETP 84, 375–382 (February 1997)] [PDF]

, 1997
В. Ф. Елесин, Arkady V. Krasheninnikov   +1 more
openalex   +1 more source

Three dimentional control of a diode based laser cutter

, 2014
Includes bibliographical referencesLaser cutting is a widely used technology in many areas of industry and research. Conventional laser cutters only offer control of two axes and either cut through a material or rudimentary control of the third dimension
Frost, Phillip John Lowne
core  

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

The overlap rate influences the microstructure and properties of laser-cladded Fe-Ni-Ti composite coatings

Frontiers in Materials
The overlap rate has a significant impact on the quality and performance of laser cladding coatings. In order to prepare high wear-resistant laser cladding coatings.
Zhen Wang, Zhen Wang, Changbao Qi, Fengqin Zhang, Fengqin Zhang   +4 more
doaj   +1 more source

Microscopic theory of hot-carrier relaxation in semiconductor-based quantum-cascade lasers [PDF]

, 2000
Rita Claudia Iotti, Fausto Rossi
openalex   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

Advanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan, Mitchell Kaiser, Maria L. Sushko, Xiaobin Liao, Hao Tang, Chun‐Chih Tseng, Matthew Yankowitz, Ying Xia, Jihui Yang, Jun Liu   +9 more
wiley   +1 more source

Structural Design and Experimental Investigation of a 1.65 µm Tapered Semiconductor Laser with InGaAlAs MQWs (On InP)

Photonics
This paper presents the design and fabrication of a 1.65 μm tapered semiconductor laser based on an InGaAlAs multiple quantum well structure (grown) on InP.
Yuan Feng, Weichen Geng, Jinghang Yang, Zhipeng Wei, Jilong Tang, Cong Zhang, Huimin Jia, Lijun Guo   +7 more
doaj   +1 more source

Theory of sub-10 fs-generation in Kerr-lens mode-locked solid-state lasers with a coherent semiconductor absorber [PDF]

, 2001
V.L. Kalashnikov
openalex   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source