Results 151 to 160 of about 14,234 (351)
Large Faraday rotation at room temperature is observed in thin films of discotic copper (Cu2+: 3d9) and vanadyl (VO2+: 3d1) enaminoketone complexes. The large Verdet constant originates from a high density of paramagnetic centers, metal‐ligand p−d hybridization and π orbitals involved in optical transitions (identified by DFT calculations), as well as ...
Karolina Łempicka‐Mirek +8 more
wiley +1 more source
Spectrum of electron-hole pair in quantum dots of a semiconductor nanolaser: theory
A theory of laser generation on size-quantization levels in semiconductor quantum dots put in a semiconductor matrix is developed. The size of quantum dots mass of which comprises the active sphere of an injection laser is determined by the new optical ...
Pokutnyi, S.I.
core +1 more source
Accurately forecasting the high-dimensional chaotic dynamics of semiconductor laser (SL) networks is essential in photonics research. In this study, we propose a spatiotemporal multiplexed photonic reservoir computing (STM-PRC) architecture, specifically
Tong Yang +5 more
doaj +1 more source
Bifurcation to square-wave switching in orthogonally delay-coupled semiconductor lasers: Theory and experiment [PDF]
Cristina Masoller +3 more
openalex +1 more source
Exciton Radiative Lifetimes in Hexagonal Diamond Ge and SixGe1–x Alloys
Strong room‐temperature photoluminescence reported in hexagonal Ge conflicts with theory predicting a nearly dark band edge. First‐principles calculations of excitonic radiative lifetimes fill a key gap in this debate, showing that pristine hexagonal Ge remains intrinsically weakly emissive, while Si alloying only modestly shortens the lifetime and ...
Michele Re Fiorentin +2 more
wiley +1 more source
Dressed-band theory for semiconductors in a high-intensity infrared laser field [PDF]
Y. Mizumoto +4 more
openalex +1 more source
This work presents two MR‐TADF emitters, BINAP‐BN1 and BINAP‐BN2, based on a BINAP core and differing numbers of tCzBN units. Both emitters show similar solution photophysics, but distinct behavior in doped films, where BINAP‐BN1 exhibits higher photoluminescence quantum yield and suppressed aggregation‐induced emission broadening compared to BINAP‐BN2.
John Marques dos Santos +8 more
wiley +1 more source
Negatively charged boron vacancy defects in hexagonal boron nitride promise near‐surface quantum sensing, but their internal spin transition rates are only partly understood. This work directly measures the defect's singlet‐state lifetime, 15(3) ns, using a nanosecond rise‐time dual‐pulse photoluminescence‐recovery method, and shows that high laser ...
Richard A. Escalante +11 more
wiley +1 more source
The Theory and Experimental Study on the Long-External Cavity Semiconductor Lasers
Chang Qi, Tong Zhao
openalex +1 more source
Bifurcation-Cascade Diagrams of an External-Cavity Semiconductor Laser: Experiment and Theory [PDF]
Byungchil Kim +4 more
openalex +1 more source

