Results 281 to 290 of about 107,328 (334)

Theory of a semiconductor laser

SPIE Proceedings, 1990
This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when
Stephan W. Koch, Murray Sargent, Weng W. Chow   +2 more
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Master-equation theory of semiconductor lasers

Physical Review A, 1995
A master-equation approach to the semiconductor laser is derived. Projection-operator techniques are used to eliminate the fast motion occurring in the system, leading to a description of the system in terms of numbers of electrons and holes, with a fully quantum-mechanical description of the field.
A. Eschmann, Crispin W. Gardiner
openaire   +3 more sources

New theory of delays in semiconductor lasers

IEEE Journal of Quantum Electronics, 1976
A simple model which can explain practically all important features of time delays in GaAs lasers is presented. It assumes only the presence of traps within the forbidden band and considers that the relative movement of quasi-Fermi levels of traps with temperature controls the population of the empty traps which act as saturable absorbers and thereby ...
D. Bhattacharyya, S. Baral, M. Ray
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Theory of the linewidth of semiconductor lasers

IEEE Journal of Quantum Electronics, 1982
A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories.
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Many-body theory for semiconductor microcavity lasers

Physical Review A, 1995
The influence of many-body, nonequilibrium, and cavity effects on the emission characteristics and carrier dynamics of semiconductor microcavity lasers is investigated. The nonlinear coupled equations for the carrier kinetics and the laser dynamics are derived.
Frank Jahnke, Stephan W. Koch
openaire   +3 more sources

Nonequilibrium theory for semiconductor laser systems

SPIE Proceedings, 2006
A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing effcient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution.
S. Becker, Jörg Hader, C. Schlichenmaier, S. W. Koch, I. Kuznetsova, W.W. Chow, Angela Thränhardt, Jerry V. Moloney   +7 more
openaire   +2 more sources

Theory of mode-locked semiconductor lasers

IEEE Journal of Quantum Electronics, 1996
We present a theoretical study of semiconductor mode-locked lasers at a phenomenological level. We use the slow absorber model of New and Haus, but extend the analysis by taking into account the shift in the gain maximum due to the changing number of carriers.
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Theory of noise in semiconductor laser emission

Zeitschrift für Physik A Hadrons and nuclei, 1967
For the complex light field amplitude of a semiconductor laser an equation of a generalized van der Pol oscillator with a fluctuating driving term is derived from first principles. This equation is shown to be valid for optical band-to-band transitions with and withoutk-selection rule. Neglecting the nonlinearity in the saturation higher than of second
Hartmut Haug, Hermann Haken
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Theory of a multimode quasiequilibrium semiconductor laser

Physical Review A, 1993
This paper gives a simple plane-wave multimode semiconductor-laser theory valid near threshold under the quasiequilibrium assumption that the total field envelope varies little in the intraband scattering times. Subject to these limitations, the theory is able to describe the full many-body effects in the semiconductor medium for a variety of field ...
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Theory of semiconductor laser cooling at low temperatures

SPIE Proceedings, 2006
AbstractWe present a microscopic many‐body theory of laser cooling of semiconductors. Using a standard diagrammatic Green's function approach, we calculate the absorption/luminescence spectra of a partially ionized electron‐hole plasma in quasi‐equilibrium at the self‐consistent T‐matrix level.
Rolf Binder, N. H. Kwong, G. Rupper
openaire   +4 more sources