Results 291 to 300 of about 107,328 (334)

Theory of Organic Semiconductor Lasers

2013
The theoretical background of organic semiconductor lasers (OSLs) is discussed in this chapter, including both an introduction to the relevant material physics of conjugated polymers and the operation of the common laser geometries - pump sources and resonators for OSLs.
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Semiconductor Lasers and Theory

2012
In this chapter, we discuss the oscillation conditions for semiconductor lasers and, then, derive the rate equations, which are the starting points of the study of chaotic dynamics in semiconductor lasers. The semiconductor laser described here is a Fabry-Perot type with a mono-layer of the active region, however other narrow-stripe edge-emitting ...
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Semiconductor laser theory with many-body effects

Physical Review A, 1989
A description of the electron-hole plasma of a semiconductor laser is developed that includes the many-body effects due to the Coulomb interactions. In particular, the plasma density-dependent band-gap renormalization, the broadening due to intraband scattering, and the Coulomb enhancement are included and evaluated for three- and two-dimensional ...
Hartmut Haug, Stephan W. Koch
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Theory of Semiconductor Quantum Dot Lasers

ECS Transactions, 2009
Operating characteristics of quantum dot (QD) lasers are discussed. Carrier-density-dependent internal loss sets an upper limit for operating temperatures and considerably reduces the characteristic temperature. Such a loss also constrains the shallowest potential well depth and the smallest tolerable size of a QD at which the lasing can be attained ...
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The theory of laser annealing of disordered semiconductors

Physics Letters A, 1980
Abstract A theoretical explanation of the disorder-order phase transition in pulsed laser annealing of ion implanted Si is given. The phase transition is related to the Bose condensation of electron-hole plasmons.
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Quasi-deterministic theory of semiconductor-laser gain switching

Optics Letters, 1990
The anomalous enhancement of fluctuations during gain switching of semiconductor lasers is considered. An extension of the quasi-deterministic theory is performed to account for the nonlinear dynamics of the process. The results are in quantitative agreement with those of a computer simulation of the Langevin rate equations describing the process.
MECOZZI, ANTONIO, SPANO P., SAPIA A.
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On fundamentals of nonlinear theory for semiconductor lasers

2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE), 2016
Fundamentals of the nonlinear theory of Fabry-Perot semiconductor lasers have been developed, an integral part of which is the natural linewidth theory. The formula for gain depending on the energy flux specifies the basic nonlinear effect in a laser. Necessary conditions for stimulated emission of the first and second kind are presented.
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Gain saturation in semiconductor lasers: Theory and experiment

IEEE Journal of Quantum Electronics, 1982
The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters.
C. Fonstad, D. Kasemset
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Theory of the dynamics of semiconductor injection lasers

Journal of the Optical Society of America B, 1988
Theoretical analysis of temporal behavior of the semiconductor injection laser in a large signal approximation is described. The parameters of the statistical limit cycle are calculated for the case of deep pulsation when the minimum of the pulse intensity is compared with the spontaneous emission level.
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Laser theory for semiconductor quantum dots in microcavities

Superlattices and Microstructures, 2008
Abstract Quantum dots (QDs) used as active material in microresonators are currently of strong topical interest due to breakthroughs in growth and device structuring. From the theory side, however, atomic models are still used to analyse the emission from these semiconductor systems, despite known differences between QDs and atoms.
Frank Jahnke, Jan Wiersig, Christopher Gies   +2 more
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