Results 301 to 310 of about 107,328 (334)

Theory and simulation of spatially extended semiconductor lasers

AIP Conference Proceedings, 2000
A hierarchy of theoretical models ranging from microscopic levels of description to effective rate equations is presented in terms of characteristic physical processes of the active semiconductor medium and the light field occurring in space and time. The applicability of the various levels of approximations of the hierarchy to describe the dynamics of
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Unidirectionality of semiconductor ring lasers: theory and experiment

IEEE 18th International Semiconductor Laser Conference, 2003
Integrated semiconductor ring lasers are designed to achieve unidirectional operation with S-crossover waveguides or retro-reflectors. Greater than 20dB unidirectionality is demonstrated both theoretically and experimentally.
S.H. Cho, Rajeev J. Ram
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Theory of Optical Feedback in Semiconductor Lasers

2012
A semiconductor laser with optical feedback is an excellent model for generating chaos in its output power and the system has proven to be very useful in practical applications. This chapter concerns the theoretical background for instability and chaos induced by optical feedback in narrow-stripe edge-emitting semiconductor lasers, such as Fabry-Perot ...
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A simple theory of the laser-induced damage in semiconductors

Applied Physics, 1977
A simple theory is presented for the laser-induced damage in semiconductors in the range of low irradiation intensities. This theory avoids the solution of coupled differential equations, and takes into account characteristic physical properties of semiconductors—i.e. energy gap, carrier lifetime, and surface recombination velocity.
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Fundamental Theory of Semiconductor Lasers and SOAs

2012
This chapter aims to give a basic understanding of semiconductor lasers and semiconductor optical amplifiers (SOAs). Starting from the underlying physics of radiative emission, together with the elements of optical waveguide theory, simple approximations are found for optical gain, lasing threshold and cavity resonances.
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Theory of semiconductor quantum-dot laser dynamics

IEEE Journal of Quantum Electronics, 2005
A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole
W.W. Chow, Stephan W. Koch
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Theory of a negative frequency feedback semiconductor laser

IEEE Journal of Quantum Electronics, 1985
A quantum theory of a semiconductor laser with negative frequency feedback stabilization is presented. The frequency noise and spectral linewidth can be decreased substantially below the modified Schawlow-Townes limit. The operator Langevin equations for a semiconductor laser supplemented by the countermodulation term for a cavity resonant frequency ...
S. Saito, Yoshihisa Yamamoto, Olle Nilsson   +2 more
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Nonlinear laser theory and natural linewidth in semiconductor lasers

2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, 2008
Our approach to the problem is based on the following basic concepts: using a spatially-distributed laser model; using an approximate Kovalevski-Noppe (KN) expression for effective natural linewidth for semiconductor lasers with application of generalized parameters.
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9B10 - Theory of the interband magnetooptical semiconductor laser

IEEE Journal of Quantum Electronics, 1966
The operation of the interband magnetooptical semiconductor laser has been realized by two techniques, viz., injection and optical pumping. This paper considers the theory of the electro-magnetic modes and threshold conditions which can be applied to either of these configurations.
B. Sacks, B. Lax
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The theory of non-Markovian gain in semiconductor lasers

IEEE Journal of Selected Topics in Quantum Electronics, 1995
In this paper, non-Markovian optical gain of a semiconductor laser is derived from recently developed time convolutionless (TCL) quantum kinetic equations for electron-hole pairs, including the many body effects. Plasma screening and excitonic effects are taken into account using an effective Hamiltonian in the time-dependent Hartree-Fock approximation.
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