Results 101 to 110 of about 11,995 (149)
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Journal of Applied Physics, 1980
The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
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The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
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CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009
A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J. +7 more
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A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J. +7 more
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Terahertz semiconductor-heterostructure lasers
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz)
KOEHLER R. +8 more
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Proceedings of the IEEE, 1966
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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Applied Optics, 1967
The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
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