Results 81 to 90 of about 527,604 (294)
Paper 72301LAn increase in the output power of semiconductor waveguide lasers is commonly achieved through broadening the stripe width of the active waveguide region.
Schmid, W. +3 more
core +1 more source
This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha +10 more
wiley +1 more source
Multidimensional‐Encoded High‐Fidelity Spectrometers With a Floating‐Base Bipolar Junction
A floating‐base bipolar junction photodetector enables multidimensional spectral encoding through synergistic gate‐ and drain‐bias modulation of interfacial barrier matching. The resulting complementary spectral responses form a diverse, weakly correlated response matrix, enabling robust and high‐fidelity spectral reconstruction even at sub‐nanoampere ...
Sang‐Hyeon Lee +11 more
wiley +1 more source
Photonics Breakthroughs 2024: Narrow-Linewidth Lasers in the Visible and Near-Infrared
Narrow-linewidth lasers enable a variety of high-precision applications, such as sensing, optical clocks, and microwave frequency generation. Advances in photonic integration in the last decade led to the development of ultra-low-noise integrated ...
Artem Prokoshin +4 more
doaj +1 more source
Single Transverse Whispering-Gallery Mode AlGaInAs/InP Hexagonal Resonator Microlasers
AlGaInAs/InP hexagonal resonator microlasers with an output waveguide connected to one vertex of the hexagon are fabricated using standard photolithography and inductively coupled plasma (ICP) etching process.
J. D. Lin +6 more
doaj +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
wiley +1 more source
Interband Mid-IR Semiconductor Lasers
Significant advances in the room-temperature (RT) continuous-wave (CW) output power of both type-I quantum-well (QW) active-layer lasers and interband cascade lasers have been reported within the 3–4- $\mu\hbox{m}$ wavelength region in 2009 ...
L. J. Mawst
doaj +1 more source
Ultra-low Noise Semiconductor Lasers
This invited paper reviews work towards creating ultra-low noise semiconductor laser sources with performance exceeding solid-state and fiber lasers, together with progress in the development of CMOS foundry Silicon Photonics versions of these devices ...
Morton, Paul A. +3 more
core
Discrete mode lasers for applications in access networks [PDF]
Fast development of the modern telecommunication networks such as fiber-to-the-home or radio-over-fiber systems require an inexpensive yet reliable optical transmitter for electro-optic conversion.
Kelly, Brian +13 more
core +2 more sources
Mode-locked semiconductor lasers and their applications for optical signal processing
S.348-349Summary form only given. Mode-locked semiconductor lasers may be used for numerous applications in optical signal processing. We provide an overview on various realizations of mode-locked semiconductor lasers for optical time division ...
Schmidt, C. +7 more
core +1 more source

