Results 71 to 80 of about 1,147 (192)
Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots
Advanced Functional Materials, EarlyView.Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz +11 more
wiley +1 more source
Photonics Breakthroughs 2024: Narrow-Linewidth Lasers in the Visible and Near-Infrared
IEEE Photonics JournalNarrow-linewidth lasers enable a variety of high-precision applications, such as sensing, optical clocks, and microwave frequency generation. Advances in photonic integration in the last decade led to the development of ultra-low-noise integrated ...
Artem Prokoshin +4 more
doaj +1 more source
Interband Mid-IR Semiconductor Lasers
IEEE Photonics Journal, 2010 Significant advances in the room-temperature (RT) continuous-wave (CW) output power of both type-I quantum-well (QW) active-layer lasers and interband cascade lasers have been reported within the 3–4- $\mu\hbox{m}$ wavelength region in 2009 ...
L. J. Mawst
doaj +1 more source
Advanced Functional Materials, EarlyView.USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll +17 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Autonomous scanning probe microscopy and multi‐objective Bayesian optimization navigate a ternary (Al,Sc,B)N combinatorial library. Registered photoluminescence, electron‐probe compositional mapping, and X‐ray diffraction connect local electromechanical function to defect‐sensitive emission, composition, and crystal structure.
Yu Liu +12 more
wiley +1 more source
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
Advanced Functional Materials, EarlyView.An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
Advanced Functional Materials, EarlyView.OEG‐functionalized Y6‐derived acceptors induce thermally driven vertical phase separation, enabling pseudo‐planar heterojunction organic photodetectors. The resulting PM6:YTEG‐4F and PM6:YTEG‐4Cl organic photodetectors suppress dark current density by approximately 260‐fold and 210‐fold, respectively, while maintaining efficient photoresponse ...
Se Jeong Park +11 more
wiley +1 more source
Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites
Advanced Functional Materials, EarlyView.Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto +4 more
wiley +1 more source
Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices
Advanced Functional Materials, EarlyView.This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies +2 more
wiley +1 more source
An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing
Advanced Functional Materials, EarlyView.Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek +12 more
wiley +1 more source