Results 51 to 60 of about 27,403 (301)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

The Role of Ultra‐Thin Buffer Layers for Achieving Ultra‐Low Dark Currents in Single‐Component Organic Photodetectors

Advanced Functional Materials, EarlyView.
Here, SubNc single‐component organic photodiodes (SC‐OPDs) are investigated, which achieve highly competitive performance metrics, including high EQE, ultra‐low JD, and high specific detectivity (D*). This study emphasizes the critical role of an organic buffer layer in studying the interface energetics and effects to achieve state‐of‐the‐art ...
Anncharlott Kusber, Ying Sun, Jakob Wolansky, Louis Conrad Winkler, Anna‐Lena Hofmann, Fred Kretschmer, Hrisheekesh Thachoth Chandran, Tianyi Zhang, Mike Hambsch, Stefan C. B. Mannsfeld, Karl Leo, Ji‐Seon Kim, Johannes Benduhn   +12 more
wiley   +1 more source

Advances in small lasers

, 2014
M.T.H was supported by an Australian Research council Future Fellowship research grant for this work. M.C.G. is grateful to the Scottish Funding Council (via SUPA) for financial support.Small lasers have dimensions or modes sizes close to or smaller than
Gather, Malte Christian, Martin T. Hill, Hill, Martin T, Malte C. Gather   +3 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Chaos bandwidth enhancement via optical injection and direct modulation of semiconductor lasers

Shenzhen Daxue xuebao. Ligong ban
A scheme for enhancing the chaos bandwidth by directly modulating semiconductor lasers subject to optical injection is proposed. A unidirectional master-slave configuration is constructed using two free-running semiconductor lasers. By introducing direct
SHANG Jinhan, XIONG Haokai, ZHANG Jianguo, LI Pu   +3 more
doaj   +1 more source

Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review

Crystals, 2022
Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a crucial fabrication technique for lasers and photonic integrated circuits (PICs).
Bin Wang, Yugang Zeng, Yue Song, Ye Wang, Lei Liang, Li Qin, Jianwei Zhang, Peng Jia, Yuxin Lei, Cheng Qiu, Yongqiang Ning, Lijun Wang   +11 more
doaj   +1 more source

Study of millimeter wave phase shift in 40 GHz hybrid mode locked lasers [PDF]

, 2009
An investigation into using hybrid mode-locked lasers to implement millimeter wave phase shift is presented. The phase shift is measured directly using a vector network analyzer enabling straightforward characterization of such systems.
Cryan, MJ, Khawaja, BAM
core   +1 more source

Unlocking Multi‐Valley Energy Pockets and Interface‐Induced Phonon Filtering in InSb Thermoelectrics by Reaction‐Driven Interface Engineering

Advanced Functional Materials, EarlyView.
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin, Xiao Yang, Xiao‐Lei Shi, Chengyun Xu, Xi Ling, Pengyu Zhang, Jinfeng Dong, Yong Du, Haisheng Chen, Ting Zhang, Zhi‐Gang Chen   +10 more
wiley   +1 more source

Passively mode-locked diode-pumped surface-emitting semiconductor laser

, 2000
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror ...
Tropper, A.C., Morier-Genoud, F., F. Morier-Genoud, J. S. Roberts, Roberts, J.S., Garnache, A., A. C. Tropper, Keller, U., Paschotta, R., A. Garnache, Oesterle, U., S. Dhanjal, U. Oesterle, Dhanjal, S., Häring, R., R. Häring, R. Paschotta, S. Hoogland, U. Keller, Hoogland, S.   +19 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source