Results 41 to 50 of about 27,403 (301)

Semiconductor Laser Spectrometry

Analytical Sciences, 1993
A semiconductor laser is more compact and less expensive than a conventional laser. Therefore, scientists prefer to use this light source in analytical spectroscopy. However, the emitting wavelength of the semiconductor laser is located in the near-infrared or deep-red region. Only a limited number of compounds are fluorescent in these spectral regions;
openaire   +2 more sources

Handbook of Establishing and Maintaining Oxygen‐Free Atmospheres

Advanced Engineering Materials, EarlyView.
This study presents a practical framework for creating oxygen‐free atmospheres at ambient pressure using silane‐doped inert gases. The results show that ultra‐low oxygen levels and strongly reduced water content can be achieved through controlled silane dosing, drying systems, and sensor monitoring.
Sascha Jan Zimmermann, René Gustus, Lienhard Wegewitz, Wolfgang Maus‐Friedrichs   +3 more
wiley   +1 more source

Discrete mode lasers for applications in access networks [PDF]

, 2007
Fast development of the modern telecommunication networks such as fiber-to-the-home or radio-over-fiber systems require an inexpensive yet reliable optical transmitter for electro-optic conversion.
Kelly, Brian, Anandarajah, Prince M., J. O'Gorman, A. Kaszubowska-Anandarajah, O'Gorman, J., P. Anandarajah, Barry, Liam P., Guignard, Celine, O\u27Gorman, J., C. Guignard, Kaszubowska-Anandarajah, Aleksandra, B. Kelly, O'Gorman, James, L. Barry   +13 more
core   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Semiconductor nanowire plasmonic lasers

Nanophotonics, 2019
Semiconductor nanowires (NW) hold great promise for micro/nanolasers owing to their naturally formed resonant microcavity, tightly confined electromagnetic field, and outstanding capability of integration with planar waveguide for on-chip optoelectronic ...
Li Chun, Liu Zhen, Chen Jie, Gao Yan, Li Meili, Zhang Qing   +5 more
doaj   +1 more source

All-optical intensity noise suppression for solid-state and semiconductor lasers

Journal of Telecommunications and Information Technology, 2005
This paper will report on a new all-optical technique of relative intensity noise (RIN) suppression for solidstate and semiconductor lasers. The new scheme we have used is based on an unbalanced Mach-Zehnder interferometer (UMZI), which is able to ...
Mark Csörnyei, Tibor Berceli, Tamás Marozsák   +2 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Bifurcation analysis of a semiconductor laser with filtered optical feedback

, 2006
We study the dynamics and bifurcations of a semiconductor laser with delayed filtered feedback, where a part of the output of the laser re-enters after spectral filtering.
Erzgraeber, H., Krauskopf, B., Erzgraeber, H, Lenstra, D., Bernd Krauskopf, H. Erzgraber, Lenstra, D, Erzgraber, H, Krauskopf, B, Daan Lenstra   +9 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices

Advanced Functional Materials, EarlyView.
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin, Arthur L. Shilov, Subhajit Jana, Ilya Mazurenko, Pierre A. Pantaleon, Mikhail Kashchenko, Nikita Krivovichev, Viacheslav Dremov, Igor Gayduchenko, Takashi Taniguchi, Kenji Watanabe, Yibo Wang, Kostya S. Novoselov, Dmitry A. Svintsov, Grigory Goltsman, Elena I. Titova, Denis A. Bandurin   +16 more
wiley   +1 more source