Results 151 to 160 of about 1,147 (192)
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Applied Optics, 1967
The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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Bidirectional Semiconductor Laser
Science, 1999A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers)
Gmachl C +5 more
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Journal of Applied Physics, 1980
The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
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The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
openaire +1 more source