Results 171 to 180 of about 27,403 (301)

Noise characteristics of semiconductor lasers with narrow linewidth. [PDF]

Heliyon
Wang H, Lei Y, Cui Q, Li S, Song X, Chen Y, Liang L, Jia P, Qiu C, Song Y, Wang Y, Hu Y, Qin L, Wang L.   +13 more
europepmc   +1 more source

Graphene-Coupled Terahertz Semiconductor Lasers for Enhanced Passive Frequency Comb Operation. [PDF]

Adv Sci (Weinh), 2019
Li H, Yan M, Wan W, Zhou T, Zhou K, Li Z, Cao J, Yu Q, Zhang K, Li M, Nan J, He B, Zeng H.   +12 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment

ACS Omega, 2018
Xuan Fang, Zhipeng Wei, Dan Fang, Xueying Chu, Jilong Tang, Dengkui Wang, Xinwei Wang, Jinhua Li, Yongfeng Li, Bin Yao, Xiaohua Wang, Rui Chen   +11 more
doaj   +1 more source

Generation of optical frequency combs in optically injected integrated gain-switched semiconductor lasers and their applications in Doppler LIDAR. [PDF]

Nanoscale Adv
Zhang Y, Chen Y, Zhou M, Liu Y, Ma W, Gang Z, Sun Z, Zheng J, Chen X, Li P.   +9 more
europepmc   +1 more source

Quantum control of phase fluctuations in semiconductor lasers. [PDF]

Proc Natl Acad Sci U S A, 2018
Santis CT, Vilenchik Y, Satyan N, Rakuljic G, Yariv A.   +4 more
europepmc   +1 more source

Stochastic resonance in quantum-well semiconductor lasers

, 2006
The quantum well (QW) semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics.
Cao L, Ma XY, Wang, J, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China. E-mail: dgunwung@sohu.com, Wu DJ, Bai YM, Wang J   +5 more
core  

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

Advanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales, Aaron Reupert, Kevin Lubig, Frank A. Müller, Berit Marx‐Glowna, Ralf Röhlsberger, Till Weickhardt, Giancarlo Soavi, Martin Hafermann, Elke Wendler, Carsten Ronning   +10 more
wiley   +1 more source

EA-Directing Formamidinium-Based Perovskite Microwires with A‑Site Doping

ACS Omega, 2021
Shan Xu, Xue Ding, Huafeng Shi, Xinhai Zhang, Xiaowei Sun, Ning Ji, Xiaoli Zhang, Zhaoyu Zhang   +7 more
doaj   +1 more source

Time‐Resolved Simultaneous Mapping of Thickness and Nanoparticle Concentration in Nanofluid Thin Films via Imaging Ellipsometry and Deep‐UV Reflectance Imaging

Advanced Materials Interfaces, EarlyView.
This study establishes a dual‐channel optical metrology framework integrating phase‐shifting imaging ellipsometry and deep‐UV reflectance imaging. This label‐free approach enables simultaneous, time‐resolved mapping of film thickness and nanoparticle (NP) concentration in dynamic nanofluid thin films.
Eita Shoji, Keita Aizawa, Hiroki Kusudo, Tetsushi Biwa   +3 more
wiley   +1 more source