Results 1 to 10 of about 319,656 (388)

Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing

Nature Communications
The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices.
Liqiang Zhang, Yiliu Wang, Anshi Chu, Zhengwei Zhang, Miaomiao Liu, Xiaohua Shen, Bailing Li, Xu Li, Chen Yi, Rong Song, Yingying Liu, Xiujuan Zhuang, Xidong Duan   +12 more
doaj   +2 more sources

Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier

Journal of Electrical and Computer Engineering, 2023
This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm.
Baqer O. Al-Nashy, Buraq T. Sh. Al-Mosawi, Mushtaq Obaid Oleiwi, Amin H. Al-Khursan   +3 more
doaj   +1 more source

Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling [PDF]

Nature Communications, 2019
Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable lasers. However, applications relying on their optical gain suffer from nonradiative Auger decay due to multi-excitonic nature of light ...
N. Taghipour, Savas Delikanli, Sushant Shendre, M. Sak, Mingjie Li, F. Işık, Ibrahim Tanriover, B. Guzelturk, T. Sum, H. Demir   +9 more
semanticscholar   +1 more source

Quantum Shells Boost the Optical Gain of Lasing Media.

ACS Nano, 2022
Auger decay of multiple excitons represents a significant obstacle to photonic applications of semiconductor quantum dots (QDs). This nonradiative process is particularly detrimental to the performance of QD-based electroluminescent and lasing devices ...
James P Cassidy, B. Diroll, Navendu Mondal, David B. Berkinsky, Kehui Zhao, Dulanjan Harankahage, Dmitry A. Porotnikov, Reagan Gately, Dmitriy Khon, Andrew H. Proppe, M. Bawendi, R. Schaller, A. Malko, M. Zamkov   +13 more
semanticscholar   +1 more source

Design, Modeling, and Characterization of Hot Electron Light Emission and Lasing in Semiconductor Heterostructure-VCSOA with Optical Gain up to 36 dB

ARO-The Scientific Journal of Koya University, 2022
Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for optical communication applications. In this work, we have studied the characteristics of gain spectra and amplifier bandwidth in reflection mode at 1300 nm GaInNAs ...
Hawro I. Yaba, Faten A. Chaqmaqchee
doaj   +1 more source

Plasmon enhanced optical Kerr susceptibility of quantum dots

Results in Physics, 2020
A significant gain in optical Kerr susceptibility of semiconductor quantum systems is of great importance for enabling nonlinear optical devices for the applications such as optical switches and high-density on-chip integration.
Guanghui Liu, Yimiao Chen, Gengyan Chen, Zhanxu Chen, Liangliang Lu, Kangxian Guo, Renming Liu   +6 more
doaj   +1 more source

Design and Implementation of 2-Input OR Gate based on XGM properties of Semiconductor Optical Amplifier

International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, 2014
In this paper we have implemented an all-optical OR-gate using simultaneous Four-Wave Mixing (FWM) and Cross-Gain Modulation (XGM) in a semiconductor optical amplifier (SOA).Which incorporates two semiconductor optical amplifiers (SOAs).The proposed OR ...
Chandra Kamal Borgohain, Chakresh Kumar, Satyajit Bora   +2 more
doaj   +1 more source

The gain and carrier density in semiconductor lasers under steady-state and transient conditions [PDF]

, 1992
The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression ...
Chen, T. R., Yariv, Amnon, Zhao, Bin
core   +1 more source

Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain [PDF]

, 1988
Lower and upper limits on size are established for quantum boxes. The lower limit is shown to result from a critical size below which bound electronic states no longer exist. This critical size is different for electrons and holes.
Vahala, Kerry J.
core   +1 more source

Semiconductor optical amplifier gain anisotropy: confinement factor against material gain

Electronics Letters, 2004
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.
Wang, W., Allaart, K., Lenstra, D.
openaire   +1 more source