Results 91 to 100 of about 319,656 (388)

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications [PDF]

open access: yes, 2012
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical ...
A O’brien-Davies   +9 more
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

open access: yesAdvanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang   +8 more
wiley   +1 more source

Recovering parity-time symmetry in highly dispersive coupled optical waveguides

open access: yesNew Journal of Physics, 2016
Coupled photonic systems satisfying parity-time symmetry (PTS) provide flexibility to engineer the flow of light including non-reciprocal propagation, perfect laser-absorbers, and ultra-fast switching.
Ngoc B Nguyen   +3 more
doaj   +1 more source

GaAs-based optoelectronic neurons [PDF]

open access: yes, 1993
An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented.
Kim, Jae H.   +2 more
core   +1 more source

Numerical analysis of four-wave mixing between 2 ps mode-locked laser pulses in a tensile-strained bulk SOA [PDF]

open access: yes, 2007
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor optical amplifier is presented. The model utilizes a modified Schrodinger equation to model the pulse propagation. The Schrodinger equation parameters such
Barry, Liam P.   +3 more
core   +1 more source

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

open access: yesAdvanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng   +7 more
wiley   +1 more source

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers

open access: yesScientific Reports, 2017
High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements.
Shaoqiang Chen   +9 more
doaj   +1 more source

Numerical Modeling of the Emission Characteristics of Semiconductor Quantum Dash Materials for Lasers and Optical Amplifiers [PDF]

open access: yes, 2004
This paper deals with the simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-to-width and width-to-height ratios of the dash size and by a wide spreading of the ...
Gioannini, Mariangela
core   +1 more source

All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers

open access: yesElectronics Letters, 2005
By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is cross-gain modulation. In the NAND gate (AB+Ā), Boolean AB is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1.
S.H. Kim   +7 more
openaire   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

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