Results 121 to 130 of about 308,424 (390)

Optoelectronic gain control of a microwave single stage GaAs MESFET amplifier [PDF]

Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap.
Simons, Rainee N.
core   +1 more source

Spectroelectrochemical Determination of Förster Radii for Triplet‐Polaron Quenching in Phosphorescent Organic Light‐Emitting Diodes

Advanced Functional Materials, EarlyView.
Phosphorescent OLEDs suffer from efficiency roll‐off due to triplet‐polaron quenching (TPQ). This study demonstrates for a large set of host‐guest combinations a spectroelectrochemical method to measure the absorption of charged molecules, enabling determining TPQ Förster radii (2.5–4 nm) from the spectral overlap.
Stan E. A. Jaspars, Hiroki Tomita, Clint van Hoesel, Nicolas Daub, René A.J. Janssen, Reinder Coehoorn   +5 more
wiley   +1 more source

A new tapered semiconductor laser with integrated multimode interference coupler

Frontiers in Physics
A new tapered semiconductor laser with an integrated multimode interference coupler is presented in this paper. The seed source of the new laser is a multimode interference coupler semiconductor laser, which overcomes the limitations imposed by the ...
Jianxin Zhang, Jianxin Zhang, Jianxin Zhang, Haizhu Sun, Zaifa Du, Zaifa Du, Min Yang, Pingping Wang, Yingchao Zhang, Yingchao Zhang, Xinmin Fan, Xinmin Fan   +11 more
doaj   +1 more source

Terahertz‐Driven Ultrafast Dynamics of Rare‐Earth Nickelates by Controlling Only the Charge Degree of Freedom

Advanced Functional Materials, EarlyView.
The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati, Sergey Kovalev, Igor Ilyakov, Atiqa Arshad, Gaurav Dubey, Ketan S. Navale, Dhanvir Singh Rana, Jan‐Christoph Deinert   +7 more
wiley   +1 more source

Detailed experimental and theoretical investigation and comparison of the cascadability of semiconductor optical amplifier gates and gain-clamped semiconductor optical amplifier gates [PDF]

, 2002
S.L. Danielsen, P.B. Hansen, D. Wolfson, B. Mikkelsen, K.E. Stubkjaer, J.-Y. Emery, F. Pommereau, M. Renaud   +7 more
openalex   +1 more source

High‐Entropy Magnetism of Murunskite

Advanced Functional Materials, EarlyView.
The study of murunskite (K2FeCu3S4) reveals that its magnetic and orbital order emerges in a simple I4/mmm crystal structure with complete disorder in the transition metal positions. Mixed‐valence Fe ions randomly occupy 1/4 of the tetrahedral sites, with the remaining 3/4 being filled by non‐magnetic Cu+ ions.
Davor Tolj, Priyanka Reddy, Ivica Živković, Luka Akšamović, Jian Rui Soh, Kamila Komȩdera, Izabela Biało, Naveen Kumar Chogondahalli Muniraju, Trpimir Ivšić, Mario Novak, Oksana Zaharko, Clemens Ritter, Thomas LaGrange, Wojciech Tabiś, Ivo Batistić, László Forró, Henrik M. Rønnow, Denis K. Sunko, Neven Barišić   +18 more
wiley   +1 more source

Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches [PDF]

, 2000
A. Már, G.M. Loubriel, F.J. Zutavern, MARTIN W O'MALLEY, Wesley D. Helgeson, DARWIN JAMES BROWN, Harold P. Hjalmarson, Albert G. Baca   +7 more
openalex   +3 more sources

Excitonic Emission Modulation in GaSe/MoS2 Van Der Waals Heterostructure Via Plasmonic Control of Interlayer Charge Transfer

Advanced Functional Materials, EarlyView.
Plasmonic hybridization enables control of light emission in 2D van der Waals heterojunctions. By stacking multilayer GaSe and monolayer MoS2 on a silver film, light emission is enhanced at the edges due to plasmonic effects. In the center, where these effects are absent, charge transfer led to reduced light emission.
Jung Ho Kim, Tae Yeon Kim, Min Choi, Hye Yun Jeong, Young Hee Lee, Hyun Seok Lee   +5 more
wiley   +1 more source

Comparison of the cascadability of conventional and gain-clamped semiconductor optical amplifier gates in multi wavelength optical networks [PDF]

, 2003
D. Wolfson, K.E. Stubkjaer
openalex   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source