Results 21 to 30 of about 308,424 (390)
Spatial dependence of gain nonlinearities in InGaAs semiconductor optical amplifier [PDF]
Counter-propagating sub-picosecond pulses are used to monitor gain saturation along the waveguide of an InGaAs superlattice semiconductor optical amplifier at 1550 nm wavelength.
Fenn, J G+3 more
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Acceleration of Carrier Lifetime in Gain-Clamped Semiconductor Optical Amplifiers
A new method to accelerate the carrier lifetime in semiconductor optical amplifiers (SOAs) is experimentally demonstrated. The four-wave mixing (FWM) effect is induced without recourse to external optical light sources.
O. M. Kharraz+4 more
doaj +1 more source
Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integration, and anti-radiation advantages over optical fiber amplifiers.
Xin Li+11 more
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Highly nondegenerate four-wave mixing and gain nonlinearity in a strained multiple-quantum-well optical amplifier [PDF]
Highly nondegenerate four-wave mixing was investigated in a 1.5 µm compressively strained multi-quantum-well semiconductor traveling-wave optical amplifier at detuning frequencies up to 600 GHz.
Dawson, Jay W.+6 more
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An artificial intelligent neural network improved particle swarm optimization algorithm is proposed for the inverse design of semiconductor optical amplifier.
Ting Zhao+6 more
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Strong amplitude-phase coupling in submonolayer quantum dots [PDF]
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett.
Bimberg, Dieter+13 more
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III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps.
Faten A. Chaqmaqchee
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Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode [PDF]
A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater.
Bar-Chaim, N.+3 more
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In this paper, the development of loop mirror multi-wavelength Brillouin fiber laser utilizing semiconductor optical amplifier and fiber Bragg grating is successfully demonstrated. A multi-wavelength BFL structure employs a single mode fiber that acts as
Idris N. A.+5 more
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We report on achieving tuned single mode operation of a multimode semiconductor laser by coupling it to a very-short external cavity with selective feedback.
Mohammed S. Al-Ghamdi+2 more
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