Results 181 to 190 of about 351,357 (273)

Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing

Advanced Functional Materials, EarlyView.
In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee, Lukas Mielke, Mahmoud Al‐Hussein, Shivam Singh, Karen Schaefer, Borja Rodriguez‐Barea, Qiong Li, Anik Kumar Ghosh, Artur Erbe, Carmen Herrmann, Yana Vaynzof, Andreas Fery, Hendrik Schlicke   +12 more
wiley   +1 more source

Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts. [PDF]

Nat Commun
Xiang Z, Luo JW, Li SS.
europepmc   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

Advanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang, Uwe Hübner, Anne Gärtner, Tao Chen, Joseph Köbel, Franka Jahn, Daniel Repp, Abhrodeep Dey, Henrik Schneidwind, Andrea Dellith, Jan Dellith, Torsten Wieduwilt, Matthias Zeisberger, Tanveer Ahmed Shaik, Astrid Bingel, Markus A. Schmidt, Jer‐Shing Huang, Ulf Peschel, Volker Deckert   +18 more
wiley   +1 more source

Fundamental principles of photoelectrochemical sensors with focus on hexavalent chromium detection. [PDF]

RSC Adv
Zhigalenok Y, Tazhibayeva A, Kokhmetova S, Starodubtseva A, Kan T, Malchik F.   +5 more
europepmc   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]

Nat Commun
Zhu W, Wang Z, Hu T, Kudrynskyi ZR, Zhou T, Kovalyuk ZD, Hu C, Lin H, Li X, Deng Y, Lv Q, Zhao L, Patanè A, Žutić I, Zheng H, Wang K.   +15 more
europepmc   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Decoding anomalous thermal transport in magnetic semiconductors. [PDF]

Sci Adv
Biswas B, Rudra S, Manjo T, Indiradevi Kamalasanan Pillai A, Bansal M, Brännvall M, Gambino D, Garbrecht M, Maity TS, Fukui H, Alling B, Saha B.   +11 more
europepmc   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

First-Principles Investigation of Zr-Based Equiatomic Quaternary Heusler Compounds Under Hydrostatic Pressure for Spintronics Applications. [PDF]

Nanomaterials (Basel)
Yuan X, Liu S, Wan P, Zhang Z, Tao C.
europepmc   +1 more source