Results 11 to 20 of about 91,586 (306)
Fabrication and Characterization of a CMOS-MEMS Humidity Sensor
This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the ...
John-Ojur Dennis +2 more
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CMOS IMAGING SENSOR TECHNOLOGY FOR AERIAL MAPPING CAMERAS [PDF]
In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial ...
K. Neumann, M. Welzenbach, M. Timm
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Research on a CMOS-MEMS Infrared Sensor with Reduced Graphene Oxide
In this research, a new application of reduced graphene oxide (rGO) for a complementary metal-oxide-semiconductor (CMOS)-MEMS infrared (IR) sensor and emitter is proposed.
Shu-Jung Chen, Bin Chen
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The treatment of refractory epilepsy via closed-loop implantable devices that act on seizures either by drug release or electrostimulation is a highly attractive option.
Andreas Bahr +8 more
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A compact online proton spectrometer for diagnosis of picosecond intense-laser accelerated protons
A compact online proton spectrometer based on a CMOS plate detector was proposed for the diagnosis of picosecond intense-laser accelerated protons. Inside the CMOS plate detector, a composite structure that composed of a scintillator screen, a fiber ...
J. Teng +26 more
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We propose a CMOS image sensor with a dedicated low-power imaging mode and low-power integrated transmitter. The proposed CMOS image sensor selectively operates in dual mode: a high-quality mode with a 1.5 V supply voltage of readout circuits to achieve ...
Sang-Hoon Kim +4 more
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Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor
This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura +2 more
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Dark Noise Suppression of NIR Response Enhanced Si-CMOS Sensor
We studied the effect of laser fluence on the dark noise performance of a laser-microstructured Si-based CMOS image sensor. The absorption characteristics and crystal properties of the microstructured sensor fabricated under different process conditions ...
Ke Wang, Chengxiang Peng, Zuoxun Hou
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Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays
Laser-induced camera damage thresholds were measured for several sensors of three different sensor architectures using a Q-switched Nd:YAG laser in order to determine their pulsed laser-induced damage thresholds.
Christopher Westgate, David James
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This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional ...
Jimin Lee +7 more
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