Results 41 to 50 of about 16,380 (261)

3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer

Sensors, 2017
This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature ...
Sho Asano, Masanori Muroyama, Takahiro Nakayama, Yoshiyuki Hata, Yutaka Nonomura, Shuji Tanaka   +5 more
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Optimización del hardware para medición de radiación utilizando sensores de imagen CMOS

Revista Elektrón
Este artículo presenta el diseño, implementación y optimización en hardware de un sistema de detección de radiación basado en un transductor optoelectrónico de imagen CMOS comercial y una FPGA de ultra bajo consumo, orientado a aplicaciones espaciales ...
Gaspar Domé, M. Celeste Cebedio, Maximiliano Antonelli, Jorge Castiñeira, Luciana De Micco   +4 more
doaj   +1 more source

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Beilstein Journal of Nanotechnology, 2013
Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained ...
Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin, Igor I. Soloviev   +6 more
doaj   +1 more source

A Novel Method to Increase LinLog CMOS Sensors’ Performance in High Dynamic Range Scenarios

Sensors, 2011
Images from high dynamic range (HDR) scenes must be obtained with minimum loss of information. For this purpose it is necessary to take full advantage of the quantification levels provided by the CCD/CMOS image sensor.
Andrés Iborra, Pedro J. Navarro, Antonio Martínez-Sánchez, Carlos Fernández   +3 more
doaj   +1 more source

Towards bendable CMOS magnetic sensors [PDF]

2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015
This paper analyses the bending-induced stress effects on ultra-thin cross-shaped magnetic sensors operating in voltage- or current-modes. Both the magnetic sensor’s sensitivity and the offset drift have been analysed. The optimum geometry and thickness of the Hall sensor are the important parameters to be analysed to compensate any mechanical stress ...
Heidari, Hadi, Wacker, Nicoleta, Roy, Scott, Dahiya, Ravinder   +3 more
openaire   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers

MATEC Web of Conferences, 2016
A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays.
Hatzistratis D., Theodoratos G., Zervakis E., Loukas D., Lambropoulos C.P.   +4 more
doaj   +1 more source

Polarization‐Dependent Synaptic‐Like Electro‐Optical Response in Ferroelectric Nematic Liquid Crystals

Advanced Functional Materials, EarlyView.
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley   +1 more source