Results 61 to 70 of about 92,888 (298)
Impact of proton radiation and annealing of CMOS image sensors on star sensor performance
AIP AdvancesStar sensors play a crucial role as high-precision optical attitude navigation devices in satellite attitude control systems. The CMOS image sensor is an important component of the imaging system of the star sensor and experiences performance degradation
Yi-Hao Cui +5 more
doaj +1 more source
Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor
IET Science, Measurement & Technology, 2021 This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS‐MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and ...
Shashi Kumar +4 more
doaj +1 more source
Low Noise and High Photodetection Probability SPAD in 180 nm Standard CMOS Technology [PDF]
, 2017 A square shaped, low noise and high photo-response single photon avalanche diode suitable for circuit integration, implemented in a standard CMOS 180 nm high voltage technology, is presented.
Accarino, Claudio +6 more
core +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Proceedings, 2018 This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 μm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor.
Ya-Chu Lee +3 more
doaj +1 more source
, 2017 A CCD image sensor of the type for providing charge multiplication by impact ionisation has an image area and a plurality of pixels. A separate multiplication register has a plurality of multiplication elements arranged to receive charge from the pixels ...
Jerram, Paul, Stefanov, Konstantin
core
Design of a single-chip pH sensor using a conventional 0.6-μm CMOS process [PDF]
, 2004 A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl μm CMOS process is presented. The sensor comprises a circuit for making differential measurements between an ion-sensitive field-effect transistor (ISFET) and a reference ...
Ali, D., Cumming, D.R.S., Hammond, P.A.
core +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, EarlyView.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer
Sensors, 2017 This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature ...
Sho Asano +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang +3 more
wiley +1 more source