Results 71 to 80 of about 1,158,958 (251)

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Optimización del hardware para medición de radiación utilizando sensores de imagen CMOS

Revista Elektrón
Este artículo presenta el diseño, implementación y optimización en hardware de un sistema de detección de radiación basado en un transductor optoelectrónico de imagen CMOS comercial y una FPGA de ultra bajo consumo, orientado a aplicaciones espaciales ...
Gaspar Domé, M. Celeste Cebedio, Maximiliano Antonelli, Jorge Castiñeira, Luciana De Micco   +4 more
doaj   +1 more source

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Beilstein Journal of Nanotechnology, 2013
Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained ...
Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin, Igor I. Soloviev   +6 more
doaj   +1 more source

A Novel Method to Increase LinLog CMOS Sensors’ Performance in High Dynamic Range Scenarios

Sensors, 2011
Images from high dynamic range (HDR) scenes must be obtained with minimum loss of information. For this purpose it is necessary to take full advantage of the quantification levels provided by the CCD/CMOS image sensor.
Andrés Iborra, Pedro J. Navarro, Antonio Martínez-Sánchez, Carlos Fernández   +3 more
doaj   +1 more source

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]

, 2009
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent, Estribeau, Magali, Magnan, Pierre   +2 more
core   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]

, 2008
We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
Olivier Saint-Pé, Goiffon, Vincent, Nicolas Huger, Frédéric Bernard, Guy Rolland, Bernard, Frédéric, Pierre Magnan, Huger, Nicolas, Corbière, Franck, Rolland, Guy, Saint-Pé, Olivier, Vincent Goiffon, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Adaptive Sensor Response Correction Using Analog Filter Compatible with Digital Technology

, 2005
An analog adaptive filter for response correction of a load cell sensor is presented. The filter employs only transistors and therefore it can be integrated using digital CMOS technology, which is suitable for System-on-Chip applications.
White, Neil M., Jafaripanah, Mehdi, Al-Hashimi, Bashir M.   +2 more
core   +1 more source

CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers

MATEC Web of Conferences, 2016
A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays.
Hatzistratis D., Theodoratos G., Zervakis E., Loukas D., Lambropoulos C.P.   +4 more
doaj   +1 more source