Results 71 to 80 of about 30,870 (310)

Optimización del hardware para medición de radiación utilizando sensores de imagen CMOS

Revista Elektrón
Este artículo presenta el diseño, implementación y optimización en hardware de un sistema de detección de radiación basado en un transductor optoelectrónico de imagen CMOS comercial y una FPGA de ultra bajo consumo, orientado a aplicaciones espaciales ...
Gaspar Domé, M. Celeste Cebedio, Maximiliano Antonelli, Jorge Castiñeira, Luciana De Micco   +4 more
doaj   +1 more source

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

Beilstein Journal of Nanotechnology, 2013
Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained ...
Denis E. Presnov, Sergey V. Amitonov, Pavel A. Krutitskii, Valentina V. Kolybasova, Igor A. Devyatov, Vladimir A. Krupenin, Igor I. Soloviev   +6 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

A Novel Method to Increase LinLog CMOS Sensors’ Performance in High Dynamic Range Scenarios

Sensors, 2011
Images from high dynamic range (HDR) scenes must be obtained with minimum loss of information. For this purpose it is necessary to take full advantage of the quantification levels provided by the CCD/CMOS image sensor.
Andrés Iborra, Pedro J. Navarro, Antonio Martínez-Sánchez, Carlos Fernández   +3 more
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers

MATEC Web of Conferences, 2016
A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays.
Hatzistratis D., Theodoratos G., Zervakis E., Loukas D., Lambropoulos C.P.   +4 more
doaj   +1 more source

DENOISING ALGORITHM FOR THE PIXEL-RESPONSE NON-UNIFORMITY CORRECTION OF A SCIENTIFIC CMOS UNDER LOW LIGHT CONDITIONS [PDF]

The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, 2016
We present a denoising algorithm for the pixel-response non-uniformity correction of a scientific complementary metal–oxide–semiconductor (CMOS) image sensor, which captures images under extremely low-light conditions. By analyzing the integrating sphere
C. Hu, Y. Bai, P. Tang
doaj   +1 more source

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2011
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
V. Goiffon, Goiffon, Vincent, C. Virmontois, M. Gaillardin, Gaillardin, Marc, P. Magnan, P. Martin-Gonthier, Virmontois, Cédric, Girard, Sylvain, P. Paillet, Paillet, Philippe, S. Girard, Cervantes, Paola, P. Cervantes, Magnan, Pierre, Martin-Gonthier, Philippe   +15 more
core   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

Advanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas, Marianne Etzelmüller Bathen, Nguyen Tien Son, Takeshi Ohshima, Gergő Thiering, Lukas Razinkovas, Ronald Ulbricht   +9 more
wiley   +1 more source

Efficient Smart CMOS Camera Based on FPGAs Oriented to Embedded Image Processing

Sensors, 2011
This article describes an image processing system based on an intelligent ad-hoc camera, whose two principle elements are a high speed 1.2 megapixel Complementary Metal Oxide Semiconductor (CMOS) sensor and a Field Programmable Gate Array (FPGA).
Ignacio Bravo, Jorge García, Felipe Espinosa, José L. Lázaro, Alfredo Gardel, Javier Baliñas   +5 more
doaj   +1 more source