Results 91 to 100 of about 30,870 (310)

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]

, 2011
17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y, Georgiou, Pantelis, Pantelis Georgiou, Timothy G. Constandinou, Prodromakis, T, Constandinou, TG, Georgiou, P, Themistoklis Prodromakis, Prodromakis, Themistoklis, Toumazou, Christofer, Liu, Yan, Yan Liu, Christofer Toumazou, Constandinou, Timothy G, Toumazou, C   +14 more
core   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

Diseño y Construcción de una Plataforma Robótica para Control PTZ de un Sistema Electro-Óptico

Revista Politécnica, 2014
En elpresente trabajo se ha desarrollado el control PTZ y la adquisición de imagendesde un sensor CMOS, para un sistema electro-óptico, el cual se prueba en unaplataforma robótica terrestre.
Patricio Burbano, B Telenchana, M Villacís, Andrés Rosales, Danilo Chávez, Eduardo Ávalos, Hugo Arcos   +6 more
doaj  

CMOS Image Sensor.

The Journal of the Institute of Image Information and Television Engineers, 1998
新しく登場したCMOSイメージセンサを, すでに撮像素子として確固たる地位を確立しているCCDイメージセンサと比較することにより, その可能性を検討し, これからの技術課題を述べる.課題を解決できると, CCDセンサと同等またはそれ以上の性能を実現し, 大きな市場を形成すると予想できる.CMOSセンサの可能性としてシステムオンチップの現状についても触れる.
openaire   +2 more sources

Evidence of a novel source of random telegraph signal in CMOS image sensors [PDF]

, 2011
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
V. Goiffon, Goiffon, Vincent, C. Virmontois, M. Gaillardin, Gaillardin, Marc, P. Magnan, P. Martin-Gonthier, Virmontois, Cédric, Magnan, Pierre, Martin-Gonthier, Philippe   +9 more
core   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

Advanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici, Gabriele Seguini, Fabiana Taglietti, Roman Gumeniuk, Riccardo Chiarcos, Michele Laus, Johannes Heitmann, Marco Fanciulli, Michele Perego   +8 more
wiley   +1 more source

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent, Molina, Romain, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Corbiere, F., Marcelot, Olivier, Magnan, P., Gaillardin, M., Corbière, Franck, Molina, R., Martin-Gonthier, P., Paillet, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Goiffon, V., Marcandella, Claude, Magnan, Pierre, Martin-Gonthier, Philippe   +20 more
core   +1 more source

Mechanical and Electrical Phenotype of hiPSC‐Cardiomyocytes on Fibronectin‐Based Hydrogels

Advanced Healthcare Materials, EarlyView.
We introduce fibronectin‐based PEG hydrogels with controlled rigidity to enable the culture of iPSC‐derived cardiomyocytes. These substrates offer an alternative to the current culture of these cells on fibronectin‐coated glass, providing enhanced structural and functional behavior. The system provides a more physiologically relevant platform to assess
Ana Da Silva Costa, Lineta Stonkute, Sara Trujillo, Mariana Azevedo Gonzalez Oliva, Francis Burton, Matthew J. Dalby, Oana Dobre, Godfrey Smith, Manuel Salmeron‐Sanchez   +8 more
wiley   +1 more source