Results 141 to 150 of about 78,988 (296)

The Johnson-Mehl-Avrami Model Applied to Martensitic Kinetics in Ausformed Cooper Based Shape Memory Alloy

The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science, 2011
CuAlNi shape memory alloys which are used as sensors and actuators have also been investigated recently as materials for medicine devices. This study shows the influence of the thermo – mechanical treatments in CuAl13Ni4 shape memory alloy on martensitic
Carmela GURAU, Gheorghe GURAU, Francisco Manuel BRAZ FERNANDES   +2 more
doaj  

Thermomechanical Methodology for Stabilizing Shape Memory Alloy (SMA) Response [PDF]

Methods and apparatuses for stabilizing the strain-temperature response for a shape memory alloy are provided. To perform stabilization of a second sample of the shape memory alloy, a first sample of the shape memory alloy is selected for isobaric ...
Padula, Santo A., II
core   +2 more sources

Additive Manufacturing of NiTi Shape Memory Alloys for Elastocaloric Applications: A Review

Advanced Functional Materials, EarlyView.
Additive manufacturing enables complex NiTi architectures that overcome key limitations in elastocaloric refrigeration, including poor heat transfer and high mechanical work input. This review surveys recent advances in LPBF‐ and DED‐fabricated NiTi shape memory alloys for elastocaloric applications, highlighting process–structure–performance ...
Ignatius Andre Setiawan, Mohammad Mehrali, Jaka Tušek, Shiva Mohajerani, Xiebin Wang, Dermot Brabazon, Mohammad Elahinia, Mehrshad Mehrpouya   +7 more
wiley   +1 more source

Shape memory plasmonic metamaterials

We demonstrate the first shape-memory-alloy-based reconfigurable metamaterial. The structural elements of such metamaterials deform with hysteresis in response to heating and cooling, resulting in non-volatile switching of the shape memory metamaterial’s
Gholipour, Behrad, MacDonald, Kevin, Plum, Eric, Tsuruta, Mark, Valente, João, Zheludev, Nikolai   +5 more
core  

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Wire-form shape memory alloy actuators: modeling, design, and control. [PDF]

Microsyst Nanoeng
Zhang R, Yue H, Sun H, Wang M, Yang F, Liu J, Yu Z, Huang X.   +7 more
europepmc   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Observer-based fault tolerant control of shape memory alloy actuator. [PDF]

Sci Rep
Mirzaei M, Rafatnia S, Shahir MM, Jamshidi S, Farbodi M.   +4 more
europepmc   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source