Results 101 to 110 of about 6,377 (257)

s‐Orbital Mediated Metavalent Bonding Enables State‐Of‐The‐Art n‐Type AgBiSe2 Thermoelectrics

Advanced Functional Materials, EarlyView.
Metavalent bonding (MVB) underpins the exceptional property portfolio of chalcogenides. Typical MVB solids are mainly found in p‐bonded systems. This work reveals that MVB can also be formed with s‐p orbital interactions upon forming a single‐electron σ‐bond, as exemplified in AgBiSe2.
Binrong Huang, Dasol Kim, Yuan Yu, Jinxuan Zhong, Jianbo Zhu, Yaoling Shen, Yu Guo, Moran Wang, Jiawei Huang, Tu Lyu, Nan Lin, Yongsheng Zhang, Matthias Wuttig, Lipeng Hu   +13 more
wiley   +1 more source

Breathable Graphene Oxide‐Polymer Composite Membranes With Two‐Step Barrier Mechanism Against Nerve Agents

Advanced Functional Materials, EarlyView.
ABSTRACT Breathable membranes that reject chemical warfare agents (CWAs) are required for next‐generation protective apparel. A dual‐function graphene oxide (GO)‐polyamine architecture is introduced that addresses the long‐standing tradeoff between vapor transmission and CWA selectivity.
Hyungjun Kim, Chanui Lee, Keunhong Jeong, Seonggi Kim, Hyunju Shin, Sunghan Kim, Youngho Jin   +6 more
wiley   +1 more source

Shape Memory Alloys for Civil Engineering. [PDF]

Materials (Basel), 2023
Fang C, Qiu C, Zheng Y.
europepmc   +1 more source

Additive Manufacturing of NiTi Shape Memory Alloys for Elastocaloric Applications: A Review

Advanced Functional Materials, EarlyView.
Additive manufacturing enables complex NiTi architectures that overcome key limitations in elastocaloric refrigeration, including poor heat transfer and high mechanical work input. This review surveys recent advances in LPBF‐ and DED‐fabricated NiTi shape memory alloys for elastocaloric applications, highlighting process–structure–performance ...
Ignatius Andre Setiawan, Mohammad Mehrali, Jaka Tušek, Shiva Mohajerani, Xiebin Wang, Dermot Brabazon, Mohammad Elahinia, Mehrshad Mehrpouya   +7 more
wiley   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Toughening of Ni-Mn-Based Polycrystalline Ferromagnetic Shape Memory Alloys. [PDF]

Materials (Basel), 2023
Ma S, Zhang X, Zheng G, Qian M, Geng L.
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Equivalent Heat Treatments and Mechanical Properties in Cold-Rolled TiNiFe Shape-Memory Alloys. [PDF]

Materials (Basel), 2023
Liu S, Hui S, Li Y, Song X, Yu Y, Ye W.
europepmc   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Environment-Induced Degradation of Shape Memory Alloys: Role of Alloying and Nature of Environment. [PDF]

Materials (Basel), 2023
Santosh S, Harris WBJ, Srivatsan TS.
europepmc   +1 more source