Results 61 to 70 of about 36,975 (307)

Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes

open access: yesAdvanced Materials, EarlyView.
Transparent perovskite light‐emitting diodes (TrPeLEDs) enable simultaneous display and transparency, expanding application possibilities. Using a metal oxide buffer layer and pulsed laser deposition, TrPeLEDs with diverse compositions and architectures are demonstrated.
Michele Forzatti   +11 more
wiley   +1 more source

Shunt Resistance Variation for a Constant Power Supply in UHF RFID Tags

open access: yes, 2009
International audienceIn the case of short reader-to-tag distances, shunt resistance diverts current in order to protect the chip but this affects the chip power supply and the delta radar cross section.
A. Moretto   +7 more
core   +1 more source

Lead Halide Perovskite Photoelectrocatalysis

open access: yesAdvanced Materials, EarlyView.
Lead halide perovskite semiconductors have emerged as highly promising materials for solar fuel and chemical synthesis. This perspective discusses advances made in the rational photoelectrode design to improve solar‐to‐chemical conversion, product scope, and scalability.
Virgil Andrei
wiley   +1 more source

Characterization of LCR Parallel-Type Electromagnetic Shunt Damper for Superconducting Magnetic Levitation

open access: yesActuators, 2022
This study investigated the effect of electromagnetic shunt dampers on the resonance amplitude reduction in a superconducting magnetic levitation system.
Kentaro Fujita, Toshihiko Sugiura
doaj   +1 more source

Thermal behavior of parasitic resistances of polycrystalline silicon solar cells

open access: yesRevue des Énergies Renouvelables, 2013
In this work, we investigate the influence of temperature on the series and shunt resistances of polycrystalline silicon solar cells and then to determine the specific expressions of both parasitic resistances as function of temperature.
S. Bensalem, M. Chegaar
doaj  

Optimisation Method for Pre-set Arc Suppression Coil Damping Resistors Enhancing Ground Fault Detection [PDF]

open access: yesZhengzhou Daxue xuebao. Gongxue ban
As a key component of pre-set arc suppression coil, the damping resistor is currently configured primarily to suppress series resonance overvoltage and prevent protection maloperation during normal operation.
ZHANG Jianbin   +4 more
doaj   +1 more source

Spin‐On SiOx‐Assisted Inkjet Printing for Interdigitated n+ and p+ Poly‐Si/SiOx Contacts in Silicon Solar Cells With Suppressed Unintended Doping

open access: yesAdvanced Materials Technologies, EarlyView.
This work presents an innovative spin‐on SiOx‐assisted inkjet‐printed approach to form localized n+ and p+ poly‐Si/SiOx passivating contacts for high‐efficiency silicon solar cells within a single‐annealing step. The developed process results in a well‐defined interdigitated doping pattern, with unintended doping and cross‐doping concentrations ...
Jiali Wang   +8 more
wiley   +1 more source

Analysis of series and shunt resistance in silicon solar cells using single and double exponential models

open access: yes, 2012
Series and shunt resistances in solar cells are parasitic parameters, which affect the illuminated current–voltage (I–V) characteristics and efficiency of cells.
Nuggehalli M. Ravindra, Priyanka Singh
core   +1 more source

A Pressure Microsensor Made of Parylene‐C for Use as Medical Implant

open access: yesAdvanced Materials Technologies, EarlyView.
A monolithic parylene‐C pressure sensor with gold strain gauges provides 6.2 μV$\mu{\rm V}$·mmHg$\cdot{\rm mmHg}$−1$^{-1}$ sensitivity. The morphology of a sputtered thin film strain sensor is granular/columnar, which results in a high gauge factor of 7.5. Thermal bonding and parylene‐C coating create a hermetic cavity.
Ann‐Kathrin Klein   +2 more
wiley   +1 more source

Improved Passivant-induced Shunt Resistance Model for n-HgCdTe Photoconducting Infrared Detector

open access: yes, 2004
A multilayer model for the majority carrier distribution is employed to calculate the shunt resistance due to passivant-induced electric field in the accumulated n+ region.
Bhan, R. K., Mittal, V., Singh, R.
core   +1 more source

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