Results 1 to 10 of about 3,250,292 (215)

Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties

Journal of Crystal Growth, 1995
Abstract Si:Al, Si:Sb and Si:B surface phases capped by amorphous Si layers were grown by MBE. The formation of the buried interfaces was studied by low-energy electron diffraction and Auger electron spectroscopy which revealed that, except for the stable Si(111)√3 × √3 -B, the majority of the surface phases suffer either from in-plane redistribution
A.V. Zotov, F. Wittmann, J. Lechner, S.V. Ryzhkov, V.G. Lifshits, I. Eisele   +5 more
openaire   +1 more source

Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells

Solar Energy Materials and Solar Cells, 2003
Abstract A computer model for the poly-Si thin film-related solar cells is established, with which the solar cells with the structure of single junction poly-Si cell, a-Si/poly-Si tandem cell and a-Si/poly-Si/poly-Si triple cell are simulated. The results indicate that the practical structure for poly-Si-related solar cell is a-Si/poly-Si/poly-Si ...
X.H. Geng, J.M. Xue, H.C. Ge, H.B. Li, Z.P. Wang, Q.Z. Wang, H.Z. Ren   +6 more
openaire   +1 more source

Growth Kinetics of Si and SiGe on Si [100], Si [110] and Si [111] Surfaces

2006 International SiGe Technology and Device Meeting, 2006
Abstract Using a reduced-pressure chemical vapor deposition cluster tool, we have studied at a growth pressure of 20 Torr, the growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) substrates. The Si growth rates on Si(1 1 0) and Si(1 1 1) are consistently less than the ones on Si(1 0 0), this both in the high temperature, supply ...
J.M. Hartmann, M. Burdin, G. Rolland, T. Billon   +3 more
openaire   +1 more source

The formation of sputtered Ta/a-Si and a-Si/Ta interfaces in a-Si/Ta/a-Si/c-Si structure

Thin Solid Films, 1995
Abstract The atomic structure of tantalum (Ta)-amorphous silicon (a-Si) interfaces has been investigated using a-Si/Ta/a-Si multilayers, sputtered on unheated crystalline silicon (c-Si) substrates without breaking the vacuum. The back and the top Si layers were respectively 1000 and 500 A thick, while the Ta thickness was 250 A.
Y. Ijdiyaou, K. Hafidi, M. Azizan, E.L. Ameziane, G. Patrat, M. Brunel, L. Ortega, T.A.Nguyen Tan   +7 more
openaire   +1 more source

Non-SI units in the SI and their use with SI prefixes

Metrologia, 2023
Abstract The International System of Units (SI) is one of the greatest scientific, technological, and political achievements of recent times. After the formal introduction of the SI, it was necessary to accept the ongoing usage of some non-SI units because of their long history of previous use, despite this losing the benefit of ...
openaire   +1 more source

Polymerization of monomers containing functional silyl groups. 12. Anionic polymerization of styrene derivatives para‐substituted with pentamethyldisilyl (Si‐Si), heptamethyltrisilyl (Si‐Si‐Si), and nonamethyltetrasilyl (Si‐Si‐Si‐Si) groups

Macromolecular Symposia, 1995
AbstractThree styrene derivatives, para‐substituted pentamethyldisilyl (Si‐Si), heptamethyltrisilyl (Si‐Si‐Si), and nonamethyltetrasilyl (Si‐Si‐Si‐Si) groups 1 ‐ 3 were synthesized and polymerized in tetrahydrofuran (THF) at −78°C and in benzene at 40°C.
Akira Hirao, Yushi Ando, Seiichi Nakahama   +2 more
openaire   +1 more source

Fused Tricyclic Disilenes with Highly Strained SiSi Double Bonds: Addition of a SiSi Single Bond to a SiSi Double Bond

Angewandte Chemie International Edition, 2006
which isprotected kinetically by the bulky helmet substituent1,1,4,4-tetrakis(trimethylsilyl)butane-1,4-diyl, does notdimerize to the corresponding disilene either in solution orin the solid state. During our efforts to obtain compoundstethering two dialkyl silylene moieties,we have achievedunexpectedly the synthesis of fused tricyclic disilenes with ...
Ryoji, Tanaka, Takeaki, Iwamoto, Mitsuo, Kira   +2 more
openaire   +2 more sources

Si—Si/Si—C/Si—O/Si—N Coupling of Hydrosilanes to Useful Silicon‐Containing Materials

ChemInform, 2004
AbstractFor Abstract see ChemInform Abstract in Full Text.
Bo‐Hye Kim, Myong‐Shik Cho, Hee‐Gweon Woo   +2 more
openaire   +2 more sources

WSi, FeSi, and CuSi interfaces

Scripta Metallurgica et Materialia, 1994
The formation and properties of metal-silicon interfaces are of great technological interest in semiconductor, high temperature material, and corrosion applications. Si can be deposited and diffused on metal surfaces to increase corrosion resistance in aqueous acidic environments, oxidation resistance at high temperatures, and erosion resistance ...
Angel Sanjurjo, Bernard Wood, Kai Lau, Gopala Krishnan   +3 more
openaire   +1 more source

Epitaxial Si Layer of Si-BP-Si Structure

Japanese Journal of Applied Physics, 1983
Boron monophosphide (BP) was epitaxially grown on an Si substrate and Si was also grown on the BP. On the Si epitaxial layer, PMOS transistors and inverter and flip-flop circuits were fabricated. The CV curve measured at 1 MHz gave a donor concentration near the surface of 2×1016 cm-3.
Souichi Sugiura, Tohru Yoshida, Katsufusa Shono   +2 more
openaire   +1 more source