Results 131 to 140 of about 174,219 (285)

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, EarlyView.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering

Advanced Electronic Materials, EarlyView.
Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich, Benjamin M. Janzen, Roland Gillen, Hans Tornatzky, Andrea Ardenghi, Oliver Bierwagen, Anna Sacchi, Piero Mazzolini, Maximilian Ries, Temma Ogawa, Hiroyuki Nishinaka, Markus R. Wagner   +11 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

Silicon carbide/carbon nitride 1D/2D heterostructure towards superior visible-light-driven hydrogen generation from water splitting. [PDF]

RSC Adv
Wei L, Yu Y, Jiao J, Wu Y.
europepmc   +1 more source

Joining of Cf/C and Cf/SiC Composites to Metals

, 2011
K. Mergia
openalex   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, EarlyView.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Tunable SiC-Based Photocatalysts for Hydrogen Generation and Environmental Remediation. [PDF]

Int J Mol Sci
Bakranova D, Nagel D, Bakranov N, Kapsalamova F, Boukhvalov D.   +4 more
europepmc   +1 more source

Degradation Mechanism of Phosphate‐Based Li‐NASICON Conductors in Alkaline Environment

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The presence of water in the cathode of a Li‐air battery shifts reactions to produce LiOH, creating a corrosive, alkaline environment. This study investigates the alkaline stability of the common Li‐NASICON solid‐state conductor chemistries through a systematic experimental study combined with computational modeling to understand the degradation ...
Benjamin X. Lam, Zhuohan Li, Tara P. Mishra, Gerbrand Ceder   +3 more
wiley   +1 more source

In Situ Growth of Metal-Organic Frameworks (MOFs) Within Porous Silicon Carbide (p-SiC) for Constructing Hierarchical Porous Composites. [PDF]

Nanomaterials (Basel)
Zhou L, Liao G, Lin T, Huang W, Zhang J, Fan R, Li Y, Zhang X, Cheng Z, Xiao L.   +9 more
europepmc   +1 more source

Electroless Bismuth Plating as a Peripheral Technology for SiC Power Devices

, 2014
Ei UCHIDA, Kaoru Tanaka, Miri Okada, Takaaki Tsuruoka, Kensuke Akamatsu, Hidemi Nawafune   +5 more
openalex   +2 more sources