Results 71 to 80 of about 211,094 (307)

Cam-Unet: Print-Cam Image Correction for Zero-Bit Fourier Image Watermarking

Sensors
Image watermarking often involves the use of handheld devices under non-structured conditions for authentication purposes, particularly in the print-cam process where smartphone cameras are used to capture watermarked printed images.
Said Boujerfaoui, Hassan Douzi, Rachid Harba, Frédéric Ros   +3 more
doaj   +1 more source

Séminaire Annuel des Doctorant-es en SIC - APPEL A COMMUNICATION

, 2016
Bonjour, Dans le cadre de son prochain Séminaire Annuel des Doctorant-es en SIC, qui aura lieu le vendredi 24 mars 2017, l'ADT-SIC lance le présent appel à communication.
Bureau de l'Adt-SIC
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Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. [PDF]

, 2008
Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Cheong, Kuan Yew, Purwadaria, Sunara, Lockman, Zainovia   +2 more
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A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide

, 2012
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material.
Reuben, Robert L, Reuben, Robert Lewis, Goel, Saurav, Luo, Xichun, Reuben, Robert L.   +4 more
core   +1 more source

Electrochemical Behavior of Flame‐Sprayed Sc‐Doped AlCoCrFeMo High‐Entropy Alloy Coatings in 3.5% Sodium Chloride Solution

Advanced Engineering Materials, EarlyView.
Scandium (Sc)‐doped AlCoCrFeMo HEA coatings are fabricated via flame spraying with 0.1, 0.3, and 0.5 wt% Sc additions. Among these, the HEA‐Sc0.3 coating exhibits the highest corrosion resistance, indicated by a more positive corrosion potential and lower current density.
Pankaj Kumar, Akash Vyas, Mohammad Aatif Qazi, Nashit Jalal, Maria Ophelia Jarligo, Mostafa Yakout, Jing Liu, André McDonald   +7 more
wiley   +1 more source

Effect of additive content on the mechanical and thermal properties of pressureless liquid-phase sintered SiC

Journal of Asian Ceramic Societies, 2020
Pressureless liquid-phase sintered SiC (LPS-SiC) ceramics fabricated from β-SiC and 1 vol% α-SiC seeds with 3–15 vol% Al2O3-Y2O3-CaO additives were prepared to investigate the effects of additive content on the mechanical and thermal properties.
Rohit Malik, Yong-Hyeon Kim, Young-Wook Kim   +2 more
doaj   +1 more source

Séminaire annuel des doctorant·es en SIC de l'ADT-SIC "Penser la généalogie des objets médiatiques" - 24 mars 2017 à Toulouse

, 2017
Nous avons le plaisir de vous annoncer que notre prochain séminaire annuel des doctorant·es en SIC (Sciences de l’Information et de la Communication) se tiendra le vendredi 24 mars 2017 de 8h30 à 17h, à Toulouse.
Bureau de l'Adt-SIC
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Experimental Characterization and Constitutive Modeling of the Effect of Prior Inelastic Strain on the Viscoplastic Behavior of AD730 at 700 °C

Advanced Engineering Materials, EarlyView.
This study shows that superalloys used in aircraft engine disks become much more prone to deformation at high temperatures if they have been strained during manufacturing. This effect increases with the level of prior strain but eventually reaches a limit.
Fabio Machado Alves da Fonseca, Patrick Villechaise, Malik Durand, Arnaud Longuet, Florent Coudon, Loïc Signor, Julien De Jaeger, Dominique Eyidi, Nathalie Bozzolo, Jonathan Cormier   +9 more
wiley   +1 more source

Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron

High Temperature Materials and Processes, 2014
In this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials.
Gui Miaomiao, Fang Yunhui, Yu Zhaoju
doaj   +1 more source

Assemblée générale de l'ADT-SIC, le 28 novembre 2018

, 2018
Bonjour, Vous êtes cordialement convié-es à la prochaine Assemblée Générale (AG) de l'ADT-SIC (Association des Doctorant-es Toulousain-es en Sciences de l'Information et de la Communication) qui aura lieu le mercredi 28 novembre à 17h30 en salle D155 ...
Bureau de l'Adt-SIC
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