Results 251 to 260 of about 44,408 (304)

Simulation Methodologies for Electromagnetic Compatibility (EMC) and Signal Integrity (SI) for System Design

2005 7th Electronic Packaging Technology Conference, 2006
Current technology trends require the utilisation of very high clock rates which have a broad electromagnetic spectrum. Electronic equipment designers require accurate characterisation and optimisation of electrical components, sub-systems and complete systems at frequencies that extend well into the microwave spectrum.
C. Christopoulos, D.W.P. Thomas, P. Sewell, J. Paul, K. Biwojno, J. Wykes, Q. Tang, S. Greedy   +7 more
openaire   +1 more source

A porous Si based novel isolation technology for mixed-signal integrated circuits

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2003
A novel isolation technology for RF applications based on semi-insulating porous Si (PS) is demonstrated. RF cross-talk isolation of 70 dB at 2 GHz and -45 dB at 8 GHz has been demonstrated using PS trenches that provide complete isolation between neighboring regions of a p/sup +/ Si chip. On-chip spiral inductors of 6 nH fabricated over the PS regions
null Han-Su Kim, null Kyuchul Chong, null Ya-Hong Xie, M. Devincentis, T. Itoh, A.J. Becker, K.A. Jenkins   +6 more
openaire   +1 more source

Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications

Journal of Applied Physics, 2003
An isolation technology for radio frequency (rf) applications based on unoxidized porous Si (PS) is demonstrated. This study examines all the important issues pertinent to incorporating PS with Si very-large-scale integration (VLSI) technology, where PS is used as a semi-insulating material. Specifically, the issues on rf isolation performance of PS as
Han-Su Kim, Ya-Hong Xie, Marc DeVincentis, Tatsuo Itoh, Keith A. Jenkins   +4 more
openaire   +1 more source

Analysis of signal integrity(SI) robustness in through-silicon interposer (TSI) interconnects

2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), 2012
This paper describes the electrical characteristics of the fine pitch interconnects in silicon carrier systems. The characteristics of such interconnects are explored and a typical FPGA-memory system is compared viz-a-viz with a traditional PCB system from low data rates to higher data rates. Our case-study shows that even though highly resistive wires
Weerasekera, Roshan, Cubillo, Joseph Romen, Katti, Guruprasad   +2 more
openaire   +2 more sources

Influence of WLAN on inter-chip UWB signal transmission with Si integrated antennas

2006 IEEE Antennas and Propagation Society International Symposium, 2006
We investigated the influence of WLAN interference (2.4 GHz) on inter-chip UWB signal transmission with Si integrated antennas. Pseudo random binary signals of Gaussian monocycle pulse were transmitted from a Si chip and received in a different Si chip in the stacked Si chips. Sinusoidal wave was transmitted from a meander antenna on a separate chip to
M. Nitta, K. Kimoto, N. Sasaki, T. Kikkawa   +3 more
openaire   +1 more source

Signal and Power Integrity Design of 2.5D HBM (High Bandwidth Memory Module) on SI Interposer

Pan Pacific Symposium, 2016
ABSTRACT Spurred by the industrial demands for terabyte/s bandwidth graphics module, high bandwidth memory (HBM) has been emerged to overcome the limitations of conventional DRAMs. Additionally, due to the fine pitch and high density interconnect routing between GPU and 4 HBMs in 2.5D terabyte/s bandwidth graphics module, HBM ...
Kyungjun Cho, Hyunsuk Lee, Joungho Kim
openaire   +1 more source

Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits

Microelectronics Reliability, 2008
The detection of dynamic photon emission by static cameras is an inexpensive approach to track circuit signal paths, but successful application depends on the signal pattern and frequency the devices are operating at. For improvement of predictability, a model has been developed, built upon the composition of operating modes and targeted to calculate ...
Piotr Laskowski, Arkadiusz Glowacki, Christian Boit   +2 more
openaire   +1 more source

The Improvement of Signal Integrity (SI) according to The Location of Via in The Vicinity of A Slot in The Reference Plane

Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, 2002
Signal integrity (SI) is affected by the location of via in the vicinity of slot. In multiple planar layer circuitry, when a signal trace changes layer through via, whether there is a slot in the reference plane beneath the signal trace or not has effects on signal integrity (SI).
Tae Lee, Junho Kim, Hyungsoo Kim, Pil Jun, Joungho Kim   +4 more
openaire   +1 more source

Laser signal injection microscopy of Si integrated circuits with a numerical aperture increasing lens

2005 IEEE LEOS Annual Meeting Conference Proceedings, 2005
Numerical aperture increasing lens (NAIL) microscopy in reflected light imaging of Si integrated circuits is applied to laser signal injection microscopy. The improved lateral spatial resolution and signal to noise ratio provided by NAIL microscopy will greatly enhance the capability of laser signal injection ...
S.B. Ippolito, B.B. Goldberg, M.S. Unlu, T.M. Levin, D.P. Vallett   +4 more
openaire   +1 more source

Integration of wavelength signal divider and infrared photodetectors based on the plasma dispersion effect in SiGe/Si

Applied Physics Letters, 1999
Based on the plasma dispersion effect, a single-mode SiGe wavelength signal divider (WSD) integrated with infrared photodetectors for optical communication at the wavelengths of 1.3 and 1.55 μm is proposed and fabricated by molecular beam epitaxy. The device performances are measured. The crosstalks of the WSD at a forward modulation bias of 1.2 V are −
Baojun Li, Zuimin Jiang, Chengwen Pei, Jie Qin, Xun Wang, Guozheng Li, Jianjun Wan, Enke Liu   +7 more
openaire   +1 more source