Results 141 to 150 of about 47,863 (340)

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

"Silicon-On-Insulator"-Based Nanosensor for the Revelation of MicroRNA Markers of Autism. [PDF]

Genes (Basel), 2022
Ivanov YD, Malsagova KA, Goldaeva KV, Pleshakova TO, Shumov ID, Galiullin RA, Kapustina SI, Iourov IY, Vorsanova SG, Ryabtsev SV, Popov VP, Archakov AI.   +11 more
europepmc   +1 more source

Mechanical Mixing in Nonlinear Nanomechanical Resonators

, 1999
Nanomechanical resonators, machined out of Silicon-on-Insulator wafers, are operated in the nonlinear regime to investigate higher-order mechanical mixing at radio frequencies, relevant to signal processing and nonlinear dynamics on nanometer scales ...
Blick, R. H., Corso, G., Erbe, A., Kraus, A., Krommer, H., Richter, K.   +5 more
core   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Silicon Nitride-on-Insulator Photonics Polarisation Convertor

Приборы и методы измерений
Photonic integrated circuits constitute a vital component of contemporary telecommunications systems, facilitating traffic management and reducing energy consumption.
D. M. Mokhovikov, E. S. Barbin, T. G. Nesterenko, A. A. Talovskaya, A. S. Myrzakhmetov, I. V. Kulinich, P. F. Baranov, D. P. Il’yaschenko   +7 more
doaj   +1 more source

Silicon-on-Insulator Optical Waveguide Pressure Sensor Based on Mach-Zehnder Interferometer. [PDF]

Micromachines (Basel), 2022
Li C, Zhang C, Yang L, Guo F.
europepmc   +1 more source

From In‐Silico Optimized Microfabrication to Experimental Validation: Engineering a Tridimensional Epi‐Intraneural Interface

Advanced Functional Materials, EarlyView.
An epi‐intraneural interface is developed through in silico optimization and a novel tridimensional microfabrication pipeline. The device integrates penetrating and epineural contacts on a flexible substrate. Mechanical, electrochemical, and in vivo testing in rat and pig reveal robust implantation, low‐threshold activation, and site‐dependent ...
Federico Ciotti, Andrea Cimolato, Noemi Gozzi, Pietro Palopoli, Luca Brugnoli, Natalija Katic Secerovic, Rebecca Gallivan, Alexander Shokurov, Carlo Menon, Johannes Weichart, Ignacio Delgado‐Martinez, Weiguo Song, Stavros Zanos, Xavier Navarro, Stanisa Raspopovic   +14 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

Micromachines
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, Arun Thirumurugan   +5 more
doaj   +1 more source