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Silicon-on-Insulator Wafers with Buried Cavities [PDF]

open access: possibleJournal of The Electrochemical Society, 2006
Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm.
Suni, Tommi   +7 more
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Biosensors in silicon on insulator

SPIE Proceedings, 2009
We present several nanophotonic biosensors on silicon-on-insulator: ring resonator based devices, slotted ring resonators to increase the interaction between light and the sample, and finally devices based on nanoplasmonic interferometers.
Tom Claes   +6 more
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Optomechanical cavities in silicon-on-insulator

Integrated Optics: Devices, Materials, and Technologies XXVII, 2023
Integrated optomechanical cavities allow precise control of optical and mechanical modes and enable strong photonphonon interactions in micron-scale volume, key for the implementation of microwave-photonic oscillators and quantum transducers. Silicon photonics provides low production cost and compatibility with the state-of-art optoelectronic circuitry.
Zhang, Jianhao   +7 more
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Frontiers of silicon-on-insulator

Journal of Applied Physics, 2003
Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics.
George K. Celler, Sorin Cristoloveanu
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SILICON ON INSULATOR TECHNOLOGY

International Journal of High Speed Electronics and Systems, 1999
Silicon On Insulator (SOI) has been developed to accompany the CMOS technology and take the relay when bulk silicon faces processing frontiers. Such limitations have not occurred quickly enough, therefore SOI remains restricted to niche applications, essentially in the field of radiation-hard integrated circuits. It has been a long wait.
openaire   +3 more sources

Silicon-on-insulator technology

IEE Proceedings I Solid State and Electron Devices, 1986
The last few years have seen considerable progress in the development of techniques for producing silicon-on-insulator (SOI) substrates suitable for fabrication of high performance devices/circuits. Among the most promising of the new ideas are those based on buried dielectric formation by ion implantation (oxygen or nitrogen), recrystallisation of ...
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Growth of GaAs on polycrystalline silicon-on-insulator

Journal of Materials Science: Materials in Electronics, 2003
The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si.
Riikonen, J.   +5 more
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Silicon on insulator optoelectronics [PDF]

open access: possible, 2001
These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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