Results 261 to 270 of about 70,198,860 (309)
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Silicon on insulator photo-activated modulator
Microelectronics Journal, 2008In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel.
Doron Abraham +4 more
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Silicon on insulator optoelectronics
2001These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE
International Journal of High Speed Electronics and Systems, 2012Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT≥ 100mA/mm ), high operating frequency ...
WILLIAM LEPKOWSKI +4 more
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Silicon-on-Insulator Wafers with Buried Cavities
Journal of The Electrochemical Society, 2006Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm.
Suni, Tommi +7 more
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Journal of Nanoscience and Nanotechnology, 2014
The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively.
I, Jyothi +5 more
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The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively.
I, Jyothi +5 more
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Silicon-on-Insulator Waveguides
2013While developed for the needs of microelectronics, the silicon-on-insulator (SOI) wafers are excellent substrates for optical waveguides. SOI is a kind of structures formed by a thin layer of crystalline silicon (Si) on an insulating layer, which typically is silicon dioxide (SiO2).
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2014
Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and ...
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Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and ...
openaire +2 more sources