Results 271 to 280 of about 47,957,654 (314)

Silicon-on-Insulator Wafers with Buried Cavities

Journal of The Electrochemical Society, 2006
Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm.
Suni, Tommi, Henttinen, Kimmo, Dekker, James, Luoto, Hannu, Kulawski, Martin, Mäkinen, J., Mutikainen, R.   +7 more
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Carrier-Transport Mechanism of Er–Silicide Schottky Contacts to Strained-Silicon-on-Insulator and Silicon-on-Insulator

Journal of Nanoscience and Nanotechnology, 2014
The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively.
I, Jyothi, V, Janardhanam, Min-Sung, Kang, Hyung-Joong, Yun, Jouhahn, Lee, Chel-Jong, Choi   +5 more
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Silicon on Insulator

1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Silicon on insulator optoelectronics

2001
These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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A silicon-on-insulator quantum wire

Solid-State Electronics, 1996
Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the
J.P. Colinge, X. Baie, V. Bayot, E. Grivei   +3 more
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Nanophotonic biosensors in silicon-on-insulator

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013
In this paper, two recent advances in silicon ring resonator biosensors are presented. First, we address the problem that due to the high index contrast, small deviations from perfect symmetry lift the degeneracy of the normal resonator mode. This severely deteriorates the quality of the output signal.
P. Bienstman, S. Werquin, C. Lerma Arce, D. Witters, R. Puers, J. Lammertyn, T. Claes, E. Hallynck, J.-W. Hoste, D. Martens   +9 more
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Silicon-on-Insulator Waveguides

2013
While developed for the needs of microelectronics, the silicon-on-insulator (SOI) wafers are excellent substrates for optical waveguides. SOI is a kind of structures formed by a thin layer of crystalline silicon (Si) on an insulating layer, which typically is silicon dioxide (SiO2).
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Silicon-on-insulator bipolar transistors

IEEE Electron Device Letters, 1983
Thin-film lateral n-p-n bipolar transistors (BJT) have been fabricated in moving melt zone recrystallized silicon on a 0.5-µm silicon dioxide substrate thermally grown on bulk silicon. Current-voltage characteristics of devices with different base widths (5 and 10 µm) have been analyzed.
M. Rodder, D.A. Antoniadis
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Optical characterization of silicon-on-insulator

1995 IEEE International SOI Conference Proceedings, 2002
A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (/spl sigma/), refractive index (n), and extinction coefficient (k) of thin films for SOI.
G.G. Li, A.R. Forouhi, A. Auberton-Herve, A. Wittkower   +3 more
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Splendid isolation [silicon on insulator]

Engineering & Technology, 2006
This paper discusses the growing popularity of silicon on insulator (SOI) technology in the semiconductor industry over the past few years. Of the total share of SOI wafer sales, a small percentage goes to SIMOX (separation by implanted oxygen) process while a large 80% goes to the rival technology developed at Grenoble-based LETI, called Smart Cut ...
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