Results 51 to 60 of about 18,108 (296)

Silicon on insulator MESFETs for RF amplifiers [PDF]

Solid-State Electronics, 2010
CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz.
Seth J. Wilk, J. Ervin, Trevor Thornton, A. Balijepalli, William Lepkowski   +4 more
openaire   +3 more sources

Conducting Polymer Microelectrode Arrays for Simultaneous Electrophysiology and Advanced Brain Imaging

Advanced Functional Materials, EarlyView.
A flexible micro‐electrocorticography array with PEDOT:SS electrodes is shown to be compatible with ultra‐high magnetic field MRI up to 9.4 T. Multimodal brain monitoring is demonstrated by performing simultaneous blood oxygen level‐dependent functional MRI in parallel with electrophysiology.
Sagnik Middya, Alejandro Carnicer‐Lombarte, Stephen Sawiak, Sam Hilton, Vincenzo F Curto, Damiano G Barone, Gabriele S Kaminski Schierle, George G Malliaras   +7 more
wiley   +1 more source

Wearable Haptic Feedback Interfaces for Augmenting Human Touch

Advanced Functional Materials, EarlyView.
The wearable haptic feedback interfaces enhance user experience in gaming, social media, biomedical instrumentation, and robotics by generating tactile sensations. This review discusses and categorizes current haptic feedback interfaces into force, thermal, and electrotactile stimulation‐based haptic feedback interfaces, elucidating their current ...
Shubham Patel, Zhoulyu Rao, Maggie Yang, Cunjiang Yu   +3 more
wiley   +1 more source

Label-Free Biosensing With a Slot-Waveguide-Based Ring Resonator in Silicon on Insulator

IEEE Photonics Journal, 2009
We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography.
Tom Claes, Jordi Girones Molera, Katrien De Vos, Etienne Schacht, Roel Baets, Peter Bienstman   +5 more
doaj   +1 more source

Organic Permeable Base Transistors—Reliable Large‐Scale Anodization for High Frequency Devices

Advanced Functional Materials, EarlyView.
Electrochemical anodization is optimized for organic permeable base transistors (OPBTs), achieving an unprecedented 87% yield and reproducibility for vertical organic transistors (VOTs) on a 15 x 15 cm wafer. Controlled Al base oxidation ensures a median transconductance of 10−3 S, leakage current below 10−9 A, current gain of 106, and transit ...
Amric Bonil, Ghader Darbandy, Jan Frede, Moritz Flemming, Christian Matthus, Lautaro Petrauskas, Juan Wang, Kyung‐Geun Lim, Hans Kleemann   +8 more
wiley   +1 more source

Cricket Inspired High Efficiency MEMS Speakers

Proceedings, 2017
We report on the realization of a biomimetic MEMS speaker inspired by field crickets. This speaker is at least five times thinner and four times more efficient than the current dynamic speakers used in portable electronics.
Meera Garud, Vamsy Godthi, Jayaprakash Reddy, Ajay Dangi, Rudra Pratap   +4 more
doaj   +1 more source

Electroplating of Wear‐ and Corrosion‐Resistant CrCoNi Medium‐Entropy Alloys beyond Hard Chromium Coatings

Advanced Functional Materials, EarlyView.
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami, Shuhei Yoshida, Kosuke Ishii, Naoya Nishi, Akiyuki Ryoki, Nobuhiro Tsuji, Kuniaki Murase, Kazuhiro Fukami   +7 more
wiley   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source

Silicon-on-insulator ‘HRes’ circuit

Electronics Letters, 1994
Retinal circuits in bulk CMOS are complicated by the need to compensate for the back-gate effect. However, partially depleted silicon-on-insulator devices have a greatly reduced back-gate effect compared to bulk CMOS. Silicon retinae implemented using SOI technology would therefore be smaller and simpler than the bulk CMOS equivalent.
R.J.T. Bunyan, G.F. Marshall, S. Collins
openaire   +2 more sources

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Advanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao, Markus Hellenbrand, Nives Strkalj, Babak Bakhit, Zhuotong Sun, Nikolaos Barmpatsalos, Dovydas Joksas, Hongyi Dou, Zedong Hu, Ping Lu, Samip Karki, Sundar Kunwar, Jonathan D. Major, Aiping Chen, Haiyan Wang, Quanxi Jia, Adnan Mehonic, Judith L. MacManus‐Driscoll   +17 more
wiley   +1 more source