Results 51 to 60 of about 47,863 (340)
High-extinction-ratio TE/TM selective Bragg grating filters on silicon-on-insulator [PDF]
, 2016 We report on the design and fabrication of TE and TM polarization selective Bragg grating filters in the form of sinusoidal perturbations on the waveguide sidewall and etched holes on the top of the waveguide, respectively.
Klitis, Charalambos +3 more
core +11 more sources
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Advanced Functional Materials, EarlyView.Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
High-Q ring resonators in thin silicon-on-insulator [PDF]
, 2004 We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding.
Baehr-Jones, Tom +3 more
core +1 more source
Advanced Functional Materials, EarlyView.This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner +9 more
wiley +1 more source
Modeling and Analysis of SOI Gratings-Based Opto-Fluidic Biosensor for Lab-on-a-Chip Applications
Photonics, 2019 The design, modeling, and analysis of a silicon-on-insulator (SOI) grating coupler integrated with a microfluidic channel for lab-on-a-chip applications are presented. The grating coupler was designed to operate at 1310 nm.
Venkatesha Muniswamy +2 more
doaj +1 more source
Silicon on insulator MESFETs for RF amplifiers [PDF]
Solid-State Electronics, 2010 CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz.
Seth J, Wilk +4 more
openaire +2 more sources
Silicon nanophotonic waveguide circuits and devices [PDF]
, 2008 Silicon on Insulator is an ideal platform for largescale nanophotonic integration. We show that tight process control is needed for well-functioning filters, and discuss a number of devices based on these ...
Baets, Roel +4 more
core +1 more source
Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
Dimension Effect on Breakdown Voltage of Partial SOI LDMOS
IEEE Journal of the Electron Devices Society, 2017 Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide–semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied.
Yue Hu +8 more
doaj +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source