Results 131 to 140 of about 70,499,433 (305)

Effect of polarization sensitivity on ultrasmall silicon-on-insulator-based arrayed waveguide grating for fiber Bragg grating sensor interrogation

open access: yes, 2018
Polarization sensitivity is an important factor that affects the interrogation of ultrasmall arrayed waveguide grating (AWG) for fiber Bragg grating (FBG) sensor. An ultrasmall 1  ×  8 silicon-on-insulator (SoI) AWG with a core size of less than 530  μm  
Cheng Zhang (70708)   +6 more
core  

Silicon on aluminum nitride structures formed by wafer bonding

open access: yes, 1994
This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials.
Bergh, Mats   +17 more
core   +1 more source

Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects

open access: yes, 2010
We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made.
SANGIORGI, ENRICO   +3 more
core   +1 more source

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

open access: yesAdvanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim   +4 more
wiley   +1 more source

Monolithically 3D‐Printed Spectral‐Spatial Meta‐Authenticators

open access: yesAdvanced Materials, EarlyView.
A single height map printed in a low‐index resin by two‐photon lithography encodes multiple visible wavelengths in one metasurface without any polarization optics. A fabrication‐aware optimization folds the printable height levels into the design, so the device is printed as optimized.
Cherry Park   +3 more
wiley   +1 more source

Outstanding figure-of-merit in SOI-LDMOSFET by a surface groove technique

open access: yesScientific Reports
A novel technique is presented to enhance the electrical characteristics of Silicon-On-Insulator Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors (SOI-LDMOSFETs).
Ali Shokouhi Shoormasti   +2 more
doaj   +1 more source

Blending With Insulating Polymers Enables Stable Anti‐Ambipolar Characteristics in n‐Type Organic Mixed‐Conductors for Heterogeneous Spiking Neurons

open access: yesAdvanced Materials, EarlyView.
A polymer blend of n‐type OMIEC P(gNDI‐gT2) with insulating PMMA yields mechanically stabilized, anti‐ambipolar organic electrochemical transistors (OECTs) with tunable ionic‐electronic transport. This blending allows low‐power, fast‐spiking heterogeneous Hodgkin–Huxley neurons, enabling biomimetic frequency deconvolution and reservoir computing, which
Zachary Laswick   +12 more
wiley   +1 more source

Phase Diagrams Enable Solid‐State Battery Design

open access: yesAdvanced Materials Interfaces, EarlyView.
Batteries are non‐equilibrium devices with inherent thermodynamic driving forces to react at interfaces, regardless of kinetics or operating conditions. Chemical potential mismatches across interfaces are dissipated via interfacial reactions. In this work, it is illustrated how phase diagrams and chemical potential maps predict degradation pathways but
Nathaniel L. Skeele, Matthias T. Agne
wiley   +1 more source

High Energy Photon Induced Defect Engineering in Ultra‐Thin Indium Oxide Transistors for BEOL‐Compatible Logic Circuits

open access: yesAdvanced Materials Interfaces, EarlyView.
Xenon flash lamp annealing modulates oxygen‐vacancy states in 1‐nm‐thick ALD In2O3 transistors within a single 139 µs pulse. The photon‐induced defect engineering shifts the threshold voltage, improves bias‐stress stability, and narrows device‐to‐device variation across 64 devices. Combining pristine and treated transistors yields NMOS inverters with a
Sung Jin Park   +5 more
wiley   +1 more source

Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

open access: yes, 2004
A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer.
Xia, JS   +5 more
core  

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