Results 131 to 140 of about 70,499,433 (305)
Polarization sensitivity is an important factor that affects the interrogation of ultrasmall arrayed waveguide grating (AWG) for fiber Bragg grating (FBG) sensor. An ultrasmall 1 × 8 silicon-on-insulator (SoI) AWG with a core size of less than 530 μm
Cheng Zhang (70708) +6 more
core
Silicon on aluminum nitride structures formed by wafer bonding
This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials.
Bergh, Mats +17 more
core +1 more source
Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects
We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made.
SANGIORGI, ENRICO +3 more
core +1 more source
Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim +4 more
wiley +1 more source
Monolithically 3D‐Printed Spectral‐Spatial Meta‐Authenticators
A single height map printed in a low‐index resin by two‐photon lithography encodes multiple visible wavelengths in one metasurface without any polarization optics. A fabrication‐aware optimization folds the printable height levels into the design, so the device is printed as optimized.
Cherry Park +3 more
wiley +1 more source
Outstanding figure-of-merit in SOI-LDMOSFET by a surface groove technique
A novel technique is presented to enhance the electrical characteristics of Silicon-On-Insulator Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors (SOI-LDMOSFETs).
Ali Shokouhi Shoormasti +2 more
doaj +1 more source
A polymer blend of n‐type OMIEC P(gNDI‐gT2) with insulating PMMA yields mechanically stabilized, anti‐ambipolar organic electrochemical transistors (OECTs) with tunable ionic‐electronic transport. This blending allows low‐power, fast‐spiking heterogeneous Hodgkin–Huxley neurons, enabling biomimetic frequency deconvolution and reservoir computing, which
Zachary Laswick +12 more
wiley +1 more source
Phase Diagrams Enable Solid‐State Battery Design
Batteries are non‐equilibrium devices with inherent thermodynamic driving forces to react at interfaces, regardless of kinetics or operating conditions. Chemical potential mismatches across interfaces are dissipated via interfacial reactions. In this work, it is illustrated how phase diagrams and chemical potential maps predict degradation pathways but
Nathaniel L. Skeele, Matthias T. Agne
wiley +1 more source
Xenon flash lamp annealing modulates oxygen‐vacancy states in 1‐nm‐thick ALD In2O3 transistors within a single 139 µs pulse. The photon‐induced defect engineering shifts the threshold voltage, improves bias‐stress stability, and narrows device‐to‐device variation across 64 devices. Combining pristine and treated transistors yields NMOS inverters with a
Sung Jin Park +5 more
wiley +1 more source
A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer.
Xia, JS +5 more
core

