Results 121 to 130 of about 42,896 (310)
The internal quality factor of tantalum superconducting resonators is significantly increased by ∼140% in the low photon regime by passivating their surfaces with a high‐quality alkene self‐assembled monolayer. Our methodology promises to enhance the performance of superconducting quantum circuits.
Harsh Gupta +6 more
wiley +1 more source
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim +9 more
wiley +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Effect of polarization sensitivity on ultrasmall silicon-on-insulator-based arrayed waveguide grating for fiber Bragg grating sensor interrogation [PDF]
Polarization sensitivity is an important factor that affects the interrogation of ultrasmall arrayed waveguide grating (AWG) for fiber Bragg grating (FBG) sensor. An ultrasmall 1 × 8 silicon-on-insulator (SoI) AWG with a core size of less than 530 μm
Cheng Zhang (70708) +6 more
core
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah +7 more
wiley +1 more source
ABSTRACT Next‐generation implantable neural‐interfacing devices are increasingly constrained by the coupled demands of electrode miniaturization, electrochemical performance, and implantation infection risk. Femtosecond laser–based hierarchical surface restructuring (HSR) technology has emerged as a scalable, manufacturing‐compatible platform for ...
Henna Khosla +12 more
wiley +1 more source
Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate [PDF]
GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as
Yang H +7 more
core
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Electron beam lithography (EBL) is a pivotal technology in the fabrication of nanoscale devices, renowned for its high precision and resolution capabilities.
Zhongyang Liu +4 more
doaj +1 more source
Plasmonic Enhancement of Fluorescence and Protein Dynamics in Living Mammalian Cells
This study demonstrates plasmonic enhancement of the function of fluorescent voltage sensing proteins (genetically encoded voltage indicators, (GEVIs), QuasAr6) in live mammalian cells. Coupling to plasmonic nanoparticles does not just increase fluorescence, but influences the protein photocycle, creating a hybrid sensor with its response speed to ...
Marco Locarno +16 more
wiley +1 more source

