Results 101 to 110 of about 42,896 (310)

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films [PDF]

open access: yes, 2005
One group of SiC films are grown on silicon-on-insulator (SOI) substrates with a series of silicon-overlayer thickness. Raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over ...
Wang Lei   +7 more
core  

SOI technology pushes the limits of CMOS for RF applications [PDF]

open access: yes, 2016
This last decade Silicon-on-Insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency commercial applications pushing the limits of CMOS technology. Thanks to the thinning down of the silicon channel, SOI MOSFETs operate in
Raskin, Jean-Pierre   +1 more
core   +1 more source

An All‐Textile, Mechano‐Capacitive Subtle Movement Sensor

open access: yesAdvanced Functional Materials, EarlyView.
A robust all‐textile capacitive sensor is introduced for measuring subtle body movements without long‐term degradation. By separating mechanical deformation from electrical sensing elements, accuracy, responsiveness, and durability are improved. Simple fabrication methods are presented, electrode effects are analyzed, and performance is validated ...
Easa AliAbbasi   +4 more
wiley   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

open access: yesElectronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Water Adsorption‐Induced Color Sensor: Insight Into the Sensing Mechanism and Interfacial Engineering for Improved Responsiveness

open access: yesAdvanced Functional Materials, EarlyView.
We report a unique color‐sensing phenomenon of a TiO2/SbSI:Sb2S3 device utilizing X‐ray absorption. Based on the revealed penetration and adsorption of water onto TiO2, we successfully improved the color response speed and sensitivity by incorporating a hydrophilic polymer interlayer, thereby opening up opportunities for photodetection applications ...
Tai Kobayashi   +9 more
wiley   +1 more source

Coupling strength control in photonic crystal/photonic wire multiple cavity devices [PDF]

open access: yes, 2009
Resonance splitting has been demonstrated for two coupled micro-cavities with control of the free spectral range between the resonance peaks, together with a normalised transmission level of approximately 60%.
De La Rue, R.M.   +7 more
core   +1 more source

Emerging heterogeneous integrated photonic platforms on silicon

open access: yesNanophotonics, 2015
Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform.
Fathpour Sasan
doaj   +1 more source

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska   +5 more
wiley   +1 more source

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

open access: yesAdvanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim   +14 more
wiley   +1 more source

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR [PDF]

open access: yes, 2009
From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition.
Yang H   +9 more
core  

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