Results 91 to 100 of about 70,499,433 (305)

Nano-layer structure of silicon-on-insulator materials

, 2003
Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits.
Chen J, Liu XH, Chen M, Liu ZL, Wang X, Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China., Dong YN, He P, Tian LL   +8 more
core   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer

, 2005
We report on the comparative studies of epitaxial SiC films grown on silicon-on-insulator (SOI) and Si bulk substrates. The silicon-over-layer (SOL) on the SOI has been thinned down to different thicknesses, with the thinnest about 10 nm.
Zhao WS, Bian EL, Zeng YP, Sun GS, Huang, FY, Chinese Acad Sci, Inst Semicond, 35 E Qinghua Rd, Beijing 100083, Peoples R China. 电子邮箱地址: fyhuang@seu.edu.cn, Huang FY, Wang XF   +6 more
core  

RF SOI CMOS Technology on 1st and 2nd Generation Trap-Rich High Resistivity SOI Wafers

, 2016
In this work 3 different types of UNIBOND Silicon-on-Insulator 5SOI) wafers including one standard and two types of trap-rich high-resistivity HR-SOI substrates provided by SOITEC are studied.
Kilchytska, Valeriya, Raskin, Jean-Pierre, Flandre, Denis, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Kazemi Esfeh, Babak   +4 more
core   +1 more source

Extreme Miniaturization of Silicon Add–Drop Microring Filters for VLSI Photonics Applications

IEEE Photonics Journal, 2010
We theoretically and experimentally investigated the performance of silicon-on-insulator (SOI) microring add-drop filters in the limit of extreme miniaturization for potential application in very dense integration of silicon photonic devices.
Ashok M. Prabhu, Alan Tsay, Zhanghua Han, Vien Van   +3 more
doaj   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates

, 2011
Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher ...
Norström, Hans,, Vestling, Lars,, Lotfi, Sara,, Vallin, Örjan,, Olsson, Jörgen,, Li, Ling-Guang,   +5 more
core  

Thermodynamic Limits to Molecular Doping in Conjugated Polymers: A Perspective on Phase Behavior and Miscibility

Advanced Materials, EarlyView.
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani, Justin Neu, Sung‐Joo Kwon, Runqio Song, Zixuan Chen, Tajah Trapier, Paschalis Gkoupidenis, David Ginger, Wei You, Jasper J. Michels, Harald Ade   +10 more
wiley   +1 more source

Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

AIP Advances, 2012
This paper reports the demonstration of exact control of the junction position in ultrathin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using epitaxial NiSi2 crystallization.
W. Mizubayashi, S. Migita, Y. Morita, H. Ota   +3 more
doaj   +1 more source