Results 81 to 90 of about 42,896 (310)

Nano-layer structure of silicon-on-insulator materials [PDF]

, 2003
Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits.
Chen J, Liu XH, Chen M, Liu ZL, Wang X, Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China., Dong YN, He P, Tian LL   +8 more
core   +2 more sources

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Structure and electrical characteristics of a thin buried oxide containing silicon inclusions [PDF]

, 2022
S.224-229This paper deals with the characterization of a thin (100 nm) buried oxide in an SOI structure. Although in principle thin oxide layers without any silicon inclusion could be formed, the buried oxides (BOXes) commonly produced in a single-step ...
Bertoni, S., Meda, L., Cerofolini, G., Gassel, H., Spaggiari, C.   +4 more
core  

Investigation of Ultrasmall $1\times N$ AWG for SOI-Based AWG Demodulation Integration Microsystem

IEEE Photonics Journal, 2015
Optoelectronic integration technologies based on silicon-on-insulator (SOI) can bring revolutionary change to on-chip arrayed waveguide grating (AWG) demodulation systems.
Hongqiang Li, Wentao Gao, Enbang Li, Chunxiao Tang   +3 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation [PDF]

, 2006
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, Peter, Hakim, M. M. A., Gili, E., Uchino, T., Hall, S., de Groot, C.H.   +5 more
core  

The Coupled Nonlinear Schrödinger Equations Describing Power and Phase for Modeling Phase-Sensitive Parametric Amplification in Silicon Waveguides

Journal of Applied Mathematics, 2014
The coupled nonlinear Schrödinger (NLS) equations describing power and phase of the optical waves are used to model phase-sensitive (PS) parametric amplification in a width-modulated silicon-on-insulator (SOI) channel waveguide.
Xuefeng Li, Zhaolu Wang, Hongjun Liu
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates [PDF]

, 2011
Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher ...
Norström, Hans,, Vestling, Lars,, Lotfi, Sara,, Vallin, Örjan,, Olsson, Jörgen,, Li, Ling-Guang,   +5 more
core  

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

Frontiers in Materials, 2016
We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process.
Kapil Debnath, Ali Z Khokhar, Stuart A Boden, Hideo Arimoto, Swe Zin Oo, Harold M H Chong, Graham Trevor Reed, Shinichi Saito   +7 more
doaj   +1 more source