Results 61 to 70 of about 42,896 (310)

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky   +2 more
doaj  

Characterization of RF Noise in UTBB FD-SOI MOSFET

IEEE Journal of the Electron Devices Society, 2016
In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors.
Pragya Kushwaha, Avirup Dasgupta, Yogendra Sahu, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan   +5 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Monte Carlo simulation of silicon-germanium transistors [PDF]

, 2002
Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha, Yangthaisong, Anucha   +1 more
core  

Advantages and potential of SOI structures for smart sensors [PDF]

, 2022
S.430-440New sensor concepts and sensor systems applying SIMOX for dielectric isolation will be reviewed. Dielectric isolation separates single crystalline silicon islands from the bulk silicon wafer by a dielectric layer.
Vogt, H.
core  

Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources

Компьютерная оптика
In the scope of a computational experiment, high-contrast gratings (HCG) formed on a silicon-on-insulator (SOI) platform within vertical-cavity surface-emitting lasers (VCSELs) were studied for multispectral laser sources. A simulation model for spectral
I.S. Shashkin, M.I. Kondratov, A.E. Grishin , K.E. Pevchikh , S.O. Slipchenko, N.A. Pikhtin   +5 more
doaj   +1 more source

Design and Fabrication of a Photonic Integrated Circuit-based Entangled Photon Pair Source using Microring Resonators [PDF]

EPJ Web of Conferences
Photonic integrated circuits (PICs) based on silicon-on-insulator (SOI) substrates provide a lightweight, compact platform for applications in quantum optics.
ten Haaf Nienke, van der Vuurst Dave, Bakker David, Castro do Amaral Gustavo, Dalle Jacob, Schmits Ruud   +5 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Wideband characterization of SOI materials and devices [PDF]

, 2007
In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted. The extraction of electrical equivalent circuits for passive and active devices in silicon-on-insulator (SOI) technology is ...
Raskin, Jean-Pierre, 3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07)   +1 more
core   +1 more source

Delay testing of partially depleted silicon-on-insulator (PD-SOI) circuits [PDF]

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2006
Partially depleted silicon-on-insulator (PD-SOI) technology has garnered more attention recently with regards to replacing traditional bulk-silicon technology as the mainstream technology of choice for high-performance/low-power digital applications. The increase in performance is due to the buried oxide layer, which provides a dramatic decrease in the
Eric W. MacDonald, Nur A. Touba
openaire   +1 more source