Results 41 to 50 of about 42,896 (310)
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol +5 more
wiley +1 more source
This review comprehensively evaluates extrusion‐based additive manufacturing for advanced ceramics, detailing feedstock options and key process parameters. By critically addressing defect mechanisms like porosity and cracking, the work highlights optimization strategies through machine learning and advanced postprocessing.
Meisam Bakhtiari +4 more
wiley +1 more source
Silicon photonic modulators for the mid-infrared [PDF]
Mid-infrared group-IV material photonics is an emerging field, which aims to migrate techniques used for near-infrared silicon photonics to longer wavelengths, and to address applications in areas such as environmental and bio-chemical sensing, homeland ...
Nedeljković, Miloš
core
High‐Resolution Corrosion Fingerprinting of Alloy Libraries via Microdroplet Spectroelectrochemistry
Ionic‐liquid microdroplet spectroelectrochemistry enables stable, localized electrochemical measurements over extended timescales. By coupling impedance spectroscopy, wetting analysis, finite‐element simulations, and operando Raman spectroscopy, it disentangles geometrical and electrochemical effects, opening new opportunities for rapid corrosion ...
Ekaterina Kurchavova +3 more
wiley +1 more source
A surface-potential-based compact model for partially-depleted silicon-on-insulator MOSFETs [PDF]
With the continuous scaling of CMOS technologies, Silicon-on-Insulator (SOI) technologies have become more competitive compared to bulk, due to their lower parasitic capacitances and leakage currents. The shift towards high frequency, low power circuitry,
Benson, James
core
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Samsudin, K. +4 more
core +1 more source
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications.
Gammon P.M. +11 more
doaj +1 more source
Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias
Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb +3 more
wiley +1 more source
Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device
The tensile strength of a silicon nanowire (SiNW) that had been integrated into a silicon-on-insulator (SOI)-based microelectromechanical system (MEMS) device was measured using electrostatic actuation and sensing.
Toshiyuki Tsuchiya +4 more
doaj +1 more source
Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor
The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide ...
Kristina A. Malsagova +21 more
doaj +1 more source

