Results 21 to 30 of about 70,499,433 (305)
Ultra-Dense Nano- and Molecular-Electronic Circuits [PDF]
, 2007 This thesis describes research towards the realization of large-scale, ultra-dense nanowire-based circuits. The primary means for the construction of such circuits is the superlattice nanowire pattern transfer (SNAP) technique.
Green, Jonathan Earl
core +1 more source
Analysis of Voltage Transfer Characteristics of Nano-scale SOI CMOS Inverter with Variable Channel Length and Doping Concentration [PDF]
Журнал нано- та електронної фізики, 2015 During many decades, continuous device performance improvement has been made possible only through device scaling. But presently, due to aggressive scaling at the sub-micron or nanometer region, the conventional planner silicon technology is suffering ...
A. Daniyel Raj +2 more
doaj
Mid-infrared photonics devices in SOI
, 2013 In this paper we present silicon photonics devices designed for the 3-4µm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500nm
Reed, G.T. +23 more
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Scheme Topological Modeling of Converters Signal Levels for Analytical Microsystems-on-Chip
Фізика і хімія твердого тіла, 2016 The results of scheme-topology design and computer modeling for signal level converter of integrated circuits and micro analysis on the basic matrix chip (BMK) with the structures "silicon-on-insulator" (SOI) are present in ...
V. V. Dovgiy, I T. Kohut, V. I. Holota
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Tapered photonic crystal microcavities embedded in photonic wire waveguides with large resonance quality-factor and high transmission [PDF]
, 2008 We present the design, fabrication, and characterization of a microcavity that exhibits simultaneously high transmission and large resonance quality-factor (Q-factor). This microcavity is formed by a single-row photonic crystal (PhC) embedded in a 500-nm-
Gnan, M. +9 more
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IEEE Photonics Journal, 2013 We demonstrate an integrated spectrometer-on-a-chip composed of an echelle diffraction grating (EDG) and metal-semiconductor-metal (MSM) waveguide photodetector array based on silicon-on-insulator (SOI).
Xiao Ma, Mingyu Li, Jian-Jun He
doaj +1 more source
Design and Analysis of a High Speed, Power Efficient 8 Bit ALU Based on SOI / SON MOSFET Technology [PDF]
Журнал нано- та електронної фізики, 2014 This paper shows an overall performance comparative analysis in terms of Average Power Consumption, Average Delay and Power-Delay Product for an 8 bit Arithmetic Logic Unit (ALU) using bulk MOS, Silicon-on-Insulator (SOI) and Silicon-on-Nothing (SON ...
Subhramita Basak +2 more
doaj
Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits
IEEE Journal of the Electron Devices Society, 2022 Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate.
Jean-Pierre Raskin
doaj +1 more source
Monolithic integration of embedded III-V lasers on SOI
Light: Science & Applications, 2023 Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility.
Wen-Qi Wei +10 more
doaj +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source