Results 1 to 10 of about 3,837 (261)
Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates [PDF]
Beilstein Journal of Nanotechnology, 2018 This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed.
Noel Kennedy, Ray Duffy, Luke Eaton
exaly +6 more sources
The advancement of silicon-on-insulator (SOI) devices and their basic properties
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020 Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal ...
T.E. Rudenko, A.N. Nazarov, V.S. Lysenko
doaj +2 more sources
Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor. [PDF]
Biomed Opt Express, 2017 Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing.
TalebiFard S +7 more
europepmc +3 more sources
IEEE Journal of the Electron Devices Society, 2018 A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs.
Jianan Deng, Jinhai Shao, Bingrui Lu
exaly +3 more sources
Single mode and polarization independence in the strained silicon-on-insulator rib waveguides [PDF]
Hemijska Industrija, 2008 In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator (SOI) rib waveguide. Single mode and birefringence free conditions in these relatively small waveguides are discussed and the influence of ...
Milošević Milan M. +2 more
doaj +1 more source
On-wafer wideband characterization: a powerful tool for improving the IC technologies
Journal of Telecommunications and Information Technology, 2023 In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic ...
Dimitri Lederer, Jean-Pierre Raskin
doaj +1 more source
DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS [PDF]
مجله مدل سازی در مهندسی, 2010 In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in
علی اصغر Orouji, سارا Heydari
doaj +1 more source
Preparation of thin-film SOI wafer by low-dose ion implantation
AIP Advances, 2023 Silicon-on-insulator (SOI) devices have many advantages, such as high speed, low energy consumption, radiation-hard, and high integration. In this paper, the separation by implanted oxygen process under low-dose implantation conditions is studied by the ...
Yuhang Zhang +5 more
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Impact of Crosstalk into High Resistivity Silicon Substrate on the RF Performance of SOI MOSFET
Journal of Telecommunications and Information Technology, 2023 Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the RF
Khaled Ben Ali +2 more
doaj +1 more source
Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI) [PDF]
Micromachines, 2012 We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with ...
Ying Luo +15 more
openaire +2 more sources