Results 31 to 40 of about 3,837 (261)

Microstructure Reconstruction in Battery Electrodes Using Machine Learning Based on Low‐Voltage Focused Ion Beam–Scanning Electron Microscopy Tomography Images

Advanced Engineering Materials, EarlyView.
Low‐voltage FIB‐SEM tomography combined with a image preprocessing pipeline improves phase contrast and enables reliable machine‐learning segmentation of conductive networks in lithium‐ion battery electrodes. Structural descriptors are extracted from segmented images, done semimanually and automated, and compared.
Lisa Beran, Vincent Nebel, Dominik Perius, Kshitij Kumar, Yannis Heim, Laura Bies, Tobias Kraus   +6 more
wiley   +1 more source

Tensile Strength of Silicon Nanowires Batch-Fabricated into Electrostatic MEMS Testing Device

Applied Sciences, 2018
The tensile strength of a silicon nanowire (SiNW) that had been integrated into a silicon-on-insulator (SOI)-based microelectromechanical system (MEMS) device was measured using electrostatic actuation and sensing.
Toshiyuki Tsuchiya, Tetsuya Hemmi, Jun-ya Suzuki, Yoshikazu Hirai, Osamu Tabata   +4 more
doaj   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

E3S Web of Conferences, 2017
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications.
Gammon P.M., Chan C.W., Gity F., Trajkovic T., Kilchytska V., Fan L., Pathirana V., Camuso G., Ben Ali K., Flandre D., Mawby P.A., Gardner J.W.   +11 more
doaj   +1 more source

Selective electrochemical etching of cantilever-type SOI-MEMS devices

Nanotechnology and Precision Engineering, 2022
It is possible to achieve selective electrochemical etching between different materials, such as p- and n-type silicon. However, achieving selective electrochemical etching on two different regions of the same p-type silicon material is a problem that ...
Xiuchun Hao, Peiling He, Xin Li
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Characterization of RF Noise in UTBB FD-SOI MOSFET

IEEE Journal of the Electron Devices Society, 2016
In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors.
Pragya Kushwaha, Avirup Dasgupta, Yogendra Sahu, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan   +5 more
doaj   +1 more source

SOI Technology:An Opportunity for RF Designers?

Journal of Telecommunications and Information Technology, 2023
This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for highfrequency (reaching cutoff frequencies close to 500 GHz forn-MOSFETs) and for harsh environments (high temperature,radiation) commercial ...
Jean-Pierre Raskin
doaj   +1 more source