Results 31 to 40 of about 42,896 (310)
IEEE Photonics Journal, 2013 We demonstrate an integrated spectrometer-on-a-chip composed of an echelle diffraction grating (EDG) and metal-semiconductor-metal (MSM) waveguide photodetector array based on silicon-on-insulator (SOI).
Xiao Ma, Mingyu Li, Jian-Jun He
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Design and Analysis of a High Speed, Power Efficient 8 Bit ALU Based on SOI / SON MOSFET Technology [PDF]
Журнал нано- та електронної фізики, 2014 This paper shows an overall performance comparative analysis in terms of Average Power Consumption, Average Delay and Power-Delay Product for an 8 bit Arithmetic Logic Unit (ALU) using bulk MOS, Silicon-on-Insulator (SOI) and Silicon-on-Nothing (SON ...
Subhramita Basak +2 more
doaj
Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits
IEEE Journal of the Electron Devices Society, 2022 Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate.
Jean-Pierre Raskin
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Monolithic integration of embedded III-V lasers on SOI
Light: Science & Applications, 2023 Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility.
Wen-Qi Wei +10 more
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Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators
Advanced Engineering Materials, EarlyView.A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad +6 more
wiley +1 more source
MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation [PDF]
, 2004 In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias.
Swanenberg, M. +4 more
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Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter [PDF]
, 2009 The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage gain of a push-pull inverting amplifier is assessed by technology-computer-aided-design (TCAD)
O'Neill, Anthony G. +3 more
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Advanced Engineering Materials, EarlyView.Low‐voltage FIB‐SEM tomography combined with a image preprocessing pipeline improves phase contrast and enables reliable machine‐learning segmentation of conductive networks in lithium‐ion battery electrodes. Structural descriptors are extracted from segmented images, done semimanually and automated, and compared.
Lisa Beran +6 more
wiley +1 more source
Highly efficient coupling between a monolithically integrated photonic crystal cavity and a bus waveguide [PDF]
, 2012 We experimentally demonstrate a new optical filter design comprising of a photonic crystal cavity and a low index bus waveguide which are monolithically integrated on a silicon-on-insulator (SOI) platform.
Ferrera, Marcello +13 more
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Sensors, 2021 A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger +5 more
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