Results 11 to 20 of about 70,499,433 (305)

Group IV platforms for the mid-infrared [PDF]

, 2013
We have investigated several material platforms for the mid-infrared including silicon on insulator (SOI), polycrystalline silicon, and suspended silicon structures.
Krauss, T.F., Reed, G.T., Peacock, A.C., M. Sorel, Ben Masaud, T.M., M. Muneeb, T. M. Ben Masaud, Chen, X., Mashanovich, G.Z., Chen, X, Mashanovich, GZ, Roelkens, Günther, Muneeb, M., H. M. H. Chong, Chong, HMH, M. Strain, Strain, M, G. T. Reed, A. C. Peacock, Ben Masaud, TM, Strain, M., Sorel, M., Roelkens, G.C., G. Z. Mashanovich, Krauss, TF, G. C. Roelkens, Nedeljković, M., Reed, GT, Peacock, AC, T. F. Krauss, Nedeljkovic, M, M. Nedeljkovic, Chong, H.M.H., X. Chen, Muneeb, Muhammad   +34 more
core   +1 more source

Preparation of a Photoluminescent Film on a Silicon-On-Insulator Device for the Simple, Rapid, and Quantitative Detection of a Hydatid Disease Diagnostic Protein Marker

IEEE Photonics Journal, 2017
A silicon-on-insulator (SOI) device is an important integrated circuit technology containing an insulating material. In this paper, an SOI wafer consisting of n-type silicon grown on the surface of a SiO2 layer was adopted.
Xiaoyi Lv, Liping Xin, Guodong Lv, Jiaqing Mo, Zhixian Gao, Zhenhong Jia, Hao Wen   +6 more
doaj   +1 more source

Fabrication and characterization of silicon-on-insulator wafers

Micro and Nano Systems Letters, 2023
Silicon-on-insulator (SOI) wafers offer significant advantages for both Integrated circuits (ICs) and microelectromechanical systems (MEMS) devices with their buried oxide layer improving electrical isolation and etch stop function.
Taeyeong Kim, Jungchul Lee
doaj   +1 more source

Photonic crystal and photonic wire nano-photonics based on silicon on insulator [PDF]

, 2006
Silicon-on-insulator (SOI) is a strong candidate for application in future planar waveguide integration technology, whether or not luminescence is extracted from the silicon.
De La Rue, Richard, Gnan, Marco, Ciminelli, C., Camargo, Edilson, Zain, Ahmad Md, Johnson, Nigel, Zhang, Hua, Pottier, Pierre, Jin, Chongjun, Ciminelli, Caterina, Armenise, Mario, Zain, A.M., Pottier, P., Jin, C.J., Camargo, E., Zhang, H., Sorel, Marc, Chong, Harold, Gnan, M., Johnson, N., Armenise, M., Zain, A. M, Sorel, M., Chong, H., Jin, C., De la Rue, R., Ntakis, I., ARMENISE, Mario Nicola, Ntakis, Iraklis   +28 more
core   +1 more source

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET

Nanomaterials, 2023
FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes after the planar MOSFET reached the limit for scaling. The SOI FinFET devices combine the benefits of FinFET and SOI devices, which can be further boosted by SiGe ...
Shixin Li, Zhenhua Wu
doaj   +1 more source

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI) [PDF]

Micromachines, 2012
We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with ...
Luo, Ying, Zheng, Xuezhe, Li, Guoliang, Shubin, Ivan, Thacker, Hiren, Yao, Jin, Lee, Jin-Hyoung, Feng, Dazeng, Fong, Joan, Kung, Cheng-Chih, Liao, Shirong, Shafiiha, Roshanak, Asghari, Mehdi, Raj, Kannan, Krishnamoorthy, Ashok V., Cunningham, John E.   +15 more
openaire   +3 more sources

Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

Modern Electronic Materials, 2015
SOI (silicon-on-insulator) structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques.
Vladimir A. Terekhov, Dmitrii N. Nesterov, Evelina P. Domashevskaya, Sergey Yu. Turishchev, Gennadii N. Kamaev, Aleksandr Kh. Antonenko   +5 more
doaj   +1 more source

Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison [PDF]

Журнал нано- та електронної фізики, 2011
During last few decade continuous device performance improvements have been achieved through a combination of device scaling, new device structures and material property improvement to its fundamental limits.
Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar   +3 more
doaj  

Silicon-based photonic integration beyond the telecommunication wavelength range [PDF]

, 2014
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the ...
Malik, Aditya, Shimura, Y, Malik, A, Gassenq, Alban, Green, WMJ, Green, William M. J., Gencarelli, Federica, Healy, N, Roelkens, Roel, Uvin, Sarah, Tournie, E, Dave, Utsav Deepak, Shimura, Yosuke, Ryckeboer, Eva M.P., Peacock, Anna C., Osgood, Richard, Ryckeboer, Eva, Chen, Xia, Mashanovich, Goran, Z., Green, William W.M.J., Van Campenhout, Joris, Tournié, Eric, Leo, Francois, Loo, Roger, Nedeljkovic, M, Osgood, Richard M J R.M., Muneeb, Muhammad, Baets, Roel G. F., Van Campenhout, J, Gencarelli, F, Kuyken, Bart, Hu, Chen, Green, William M.J., Loo, R, Chen, X, Nedeljković, Miloš, Dave, Utsav, Hattasan, Nannicha, Cerutti, Laurent, Rodriguez, Jean-Baptiste, Mashanovich, Goran,, Sanchez, Dorian, Wang, Ruijun, Roelkens, Gunther, Baets, Roel, Rodriguez, Jean Baptiste, Healy, Noel, Shen, L, Vincent, Benjamin, Osgood, R, Healy, Noel V., Cerutti, L, Shen, Li, Mashanovich, Goran Z., Vincent, B, Liu, XP, Hens, Zeger, R'Ghif, Naima, Peacock, AC, Mashanovich, Goran, Rodriguez, JB, Mashanovich, G, Liu, Xiaoping   +62 more
core   +1 more source

Optimization of Hybrid Silicon Microring Lasers

IEEE Photonics Journal, 2011
In this paper, we review the recent optimization work in hybrid silicon microring lasers. Device structure and fabrication procedures are discussed first, followed by two major improvements in carrier injection and thermal management.
D. Liang, M. Fiorentino, S. Srinivasan, S. T. Todd, G. Kurczveil, J. E. Bowers, R. G. Beausoleil   +6 more
doaj   +1 more source