Results 11 to 20 of about 42,896 (310)
In this paper the results of architecture development, layout designof analytical microsystem-on-chip with the structures "silicon-on-insulator" (SOI) and its elements schemotechnical computer simulation for determine their electrical and time ...
V. V. Dovgiy, I. T. Kohut, V. I. Golota
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Group IV platforms for the mid-infrared [PDF]
We have investigated several material platforms for the mid-infrared including silicon on insulator (SOI), polycrystalline silicon, and suspended silicon structures.
Krauss, T.F. +34 more
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High-Q TeO2–Si Hybrid Microring Resonators
We present the design and experimental measurement of tellurium oxide-clad silicon microring resonators with internal Q factors of up to 1.5 × 106, corresponding to a propagation loss of 0.42 dB/cm at wavelengths around 1550 nm.
Khadijeh Miarabbas Kiani +3 more
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A silicon-on-insulator (SOI) device is an important integrated circuit technology containing an insulating material. In this paper, an SOI wafer consisting of n-type silicon grown on the surface of a SiO2 layer was adopted.
Xiaoyi Lv +6 more
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Photonic crystal and photonic wire nano-photonics based on silicon on insulator [PDF]
Silicon-on-insulator (SOI) is a strong candidate for application in future planar waveguide integration technology, whether or not luminescence is extracted from the silicon.
De La Rue, Richard +28 more
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Fabrication and characterization of silicon-on-insulator wafers
Silicon-on-insulator (SOI) wafers offer significant advantages for both Integrated circuits (ICs) and microelectromechanical systems (MEMS) devices with their buried oxide layer improving electrical isolation and etch stop function.
Taeyeong Kim, Jungchul Lee
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Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology [PDF]
Statistical variability in ultra-scaled CMOS devices is a major challenge faced by the semiconductor industry today. It has critical impact on functionality and yield, particularly of static random access memory (SRAM) circuits.
Markov, SN +7 more
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SOI (silicon-on-insulator) structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques.
Vladimir A. Terekhov +5 more
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Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET
FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes after the planar MOSFET reached the limit for scaling. The SOI FinFET devices combine the benefits of FinFET and SOI devices, which can be further boosted by SiGe ...
Shixin Li, Zhenhua Wu
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Ultra-Dense Nano- and Molecular-Electronic Circuits [PDF]
This thesis describes research towards the realization of large-scale, ultra-dense nanowire-based circuits. The primary means for the construction of such circuits is the superlattice nanowire pattern transfer (SNAP) technique.
Green, Jonathan Earl
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