Results 51 to 60 of about 42,896 (310)
Advanced Engineering Materials, EarlyView.Controlling the Field Assisted Sintering Technology (FAST) parameters, dwell temperature and cooling rate, significantly influences the microstructural evolution in titanium aluminide GE4822. Significant γ‐lamellar colonies develop only upon cooling through the α‐transus.
Jack Krohn, James Pepper, Martin Jackson
wiley +1 more source
Development of decoration and preferential-etching methods for delineation of crystal defects in semiconductor materials [PDF]
, 2013 Silicon wafers such as Silicon on Insulator (SOI) and strained silicon on Insulator (sSOI) are the essential and basic materials of advanced microelectronic devices.
Idrisi, Hanan
core
IEEE Journal of the Electron Devices Society, 2018 Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen +14 more
doaj +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator [PDF]
, 2023 Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by direct epitaxy could benefit from a front-end process where III–V materials are grown ...
Graham T. Reed (3962630) +7 more
core +1 more source
Selective electrochemical etching of cantilever-type SOI-MEMS devices
Nanotechnology and Precision Engineering, 2022 It is possible to achieve selective electrochemical etching between different materials, such as p- and n-type silicon. However, achieving selective electrochemical etching on two different regions of the same p-type silicon material is a problem that ...
Xiuchun Hao, Peiling He, Xin Li
doaj +1 more source
Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer
Advanced Functional Materials, EarlyView.Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero +12 more
wiley +1 more source
Sensors, 2009 Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly ...
Udi Virobnik +7 more
doaj +1 more source
Ferroelectricity in Antiferromagnetic Wurtzite Nitrides
Advanced Functional Materials, EarlyView.We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa +3 more
wiley +1 more source
Hot carrier reliability perspective on silicon-on-insulator lateral double-diffused MOSFET (LDMOS) [PDF]
, 2010 Silicon-on-insulator (SOI) device has a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer. Recently, there is an increased interest in SOI wafers for application to the fabrication of advanced CMOS ICs.
Liao, Jie
core +1 more source