Results 51 to 60 of about 70,499,433 (305)
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
doaj
Characterization of RF Noise in UTBB FD-SOI MOSFET
IEEE Journal of the Electron Devices Society, 2016 In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors.
Pragya Kushwaha +5 more
doaj +1 more source
Selective electrochemical etching of cantilever-type SOI-MEMS devices
Nanotechnology and Precision Engineering, 2022 It is possible to achieve selective electrochemical etching between different materials, such as p- and n-type silicon. However, achieving selective electrochemical etching on two different regions of the same p-type silicon material is a problem that ...
Xiuchun Hao, Peiling He, Xin Li
doaj +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Monte Carlo simulation of silicon-germanium transistors [PDF]
, 2002 Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha +1 more
core
Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources
Компьютерная оптикаIn the scope of a computational experiment, high-contrast gratings (HCG) formed on a silicon-on-insulator (SOI) platform within vertical-cavity surface-emitting lasers (VCSELs) were studied for multispectral laser sources. A simulation model for spectral
I.S. Shashkin +5 more
doaj +1 more source
Design and Fabrication of a Photonic Integrated Circuit-based Entangled Photon Pair Source using Microring Resonators [PDF]
EPJ Web of ConferencesPhotonic integrated circuits (PICs) based on silicon-on-insulator (SOI) substrates provide a lightweight, compact platform for applications in quantum optics.
ten Haaf Nienke +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash +4 more
wiley +1 more source
Development of decoration and preferential-etching methods for delineation of crystal defects in semiconductor materials [PDF]
, 2013 Silicon wafers such as Silicon on Insulator (SOI) and strained silicon on Insulator (sSOI) are the essential and basic materials of advanced microelectronic devices.
Idrisi, Hanan
core
A Compact Silicon-on-insulator Polarization Splitter [PDF]
, 2005 A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced
Kiyat, I. +5 more
core +1 more source