Results 71 to 80 of about 42,896 (310)

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

Advanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng   +11 more
wiley   +1 more source

Stimulated Brillouin scattering in a non-suspended ultra-low-loss thick-SOI platform

APL Photonics
Silicon photonics, with its CMOS compatibility and high integration density, has enabled a wide range of novel applications. Harnessing stimulated Brillouin scattering (SBS), an optomechanic interaction between optical and gigahertz acoustic waves, in ...
Kaixuan Ye, Akshay Keloth, Yisbel E. Marin, Matteo Cherchi, Timo Aalto, David Marpaung   +5 more
doaj   +1 more source

Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

Biosensors, 2018
Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated.
Kristina A. Malsagova, Tatyana O. Pleshakova, Andrey F. Kozlov, Ivan D. Shumov, Mikhail A. Ilnitskii, Andrew V. Miakonkikh, Vladimir P. Popov, Konstantin V. Rudenko, Alexander V. Glukhov, Igor N. Kupriyanov, Nina D. Ivanova, Alexander E. Rogozhin, Alexander I. Archakov, Yuri D. Ivanov   +13 more
doaj   +1 more source

Kinetics of {311} defect dissolution in silicon-on-insulator (SOI)

Materials Science and Engineering: B, 2004
Abstract The reaction kinetics of {3 1 1} defect dissolution in SIMOX, SOITEC and bulk silicon materials have been investigated. The effects of implant energy and surface silicon thickness on the activation energy for {3 1 1} dissolution have been measured using quantitative TEM (QTEM).
Department of Materials Science and Engineering, SWAMP Center, University of Florida, Gainesville, FL 32611, USA ( host institution ), Saavedra, A.F ( author ), Jones, K.S ( author ), Law, M.E ( author ), Chan, K.K ( author )   +4 more
openaire   +2 more sources

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer [PDF]

, 2005
We report on the comparative studies of epitaxial SiC films grown on silicon-on-insulator (SOI) and Si bulk substrates. The silicon-over-layer (SOL) on the SOI has been thinned down to different thicknesses, with the thinnest about 10 nm.
Zhao WS, Bian EL, Zeng YP, Sun GS, Huang, FY, Chinese Acad Sci, Inst Semicond, 35 E Qinghua Rd, Beijing 100083, Peoples R China. 电子邮箱地址: fyhuang@seu.edu.cn, Huang FY, Wang XF   +6 more
core  

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator

Advanced Electronic Materials
Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while ...
Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel   +3 more
doaj   +1 more source

A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application

Proceedings, 2018
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick
Sanggwon Lee, Keita Yasutomi, Ho Hai Nam, Masato Morita, Shoji Kawahito   +4 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation [PDF]

, 2006
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm.
Ashburn, P., Gili, E., Hakim, M.M.A., Uchino, T., Hall, S., de Groot, C. H.   +5 more
core