Results 111 to 120 of about 42,896 (310)

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs [PDF]

open access: yes, 2010
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated.
O'Neill, Anthony G.   +3 more
core   +1 more source

Extreme Miniaturization of Silicon Add–Drop Microring Filters for VLSI Photonics Applications

open access: yesIEEE Photonics Journal, 2010
We theoretically and experimentally investigated the performance of silicon-on-insulator (SOI) microring add-drop filters in the limit of extreme miniaturization for potential application in very dense integration of silicon photonic devices.
Ashok M. Prabhu   +3 more
doaj   +1 more source

Ultrawide Bandwidth Optomechanical Magnetometry Using Flux Concentration

open access: yesAdvanced Functional Materials, EarlyView.
High‐permeability flux concentrators enable ultrawide‐bandwidth chip‐scale optomechanical magnetometry by exploiting magnetic nonlinearity to up‐convert low‐frequency fields to the mechanical resonance, where sensitivity is optimal. This enables flat wideband operation over more than four orders of magnitude, from tens of kilohertz to sub‐hertz ...
Benjamin J. Carey   +6 more
wiley   +1 more source

Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects [PDF]

open access: yes, 2010
We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made.
SANGIORGI, ENRICO   +3 more
core  

Mimicking Silent Synapse Recruitment: A SiOx/Cu‐Pancake Memristive Device For Analog Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Electroforming‐free TiN/SiOx/Cu/SiOx/TiN memristive devices exploit pancake‐like Cu nanoparticles embedded in a SiOx double layer to create a heterogeneous Schottky‐barrier landscape. Under bias, oxygen‐vacancy redistribution progressively lowers local barriers and recruits initially inactive Cu‐PC pathways into a parallel conduction ensemble, enabling
Rouven Lamprecht   +10 more
wiley   +1 more source

A Novel Statistical Timing and Leakage Power Characterization of Partially-Depleted [PDF]

open access: yes, 2008
This paper presents a novel statistical characterization for accurate timing and a new probabilistic based analysis for leakage power estimation of Partially-Depleted Silicon-On-Insulator (PD-SOI) circuits in BSIMSOI3.2 100nm technology.
Kyung Ki Kim   +4 more
core  

Simulation of electrical characterization on lateral silicon-on-insulator PIN Diode for space radiation detector [PDF]

open access: yes, 2014
This paper discusses on the performance of SOI pin diode radiation detector when compared to conventional bulk silicon pin diode radiation detector. Lateral SOI detector was virtually fabricated in SILVACO ATHENA and its electrical characteristics was ...
Z. Zainudin   +7 more
core   +1 more source

Propagation Losses of Slotted Photonic Crystal Waveguides

open access: yesIEEE Photonics Journal, 2012
We have fabricated and characterized a set of slotted photonic crystal (SPhC) waveguides in silicon-on-insulator (SOI) with a length of up to 300 $\mu\hbox{m}$ and slot widths ranging between 115 and 145 nm.
A. Di Falco   +5 more
doaj   +1 more source

Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds

open access: yesAdvanced Functional Materials, EarlyView.
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley   +1 more source

Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

open access: yesAIP Advances, 2012
This paper reports the demonstration of exact control of the junction position in ultrathin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using epitaxial NiSi2 crystallization.
W. Mizubayashi   +3 more
doaj   +1 more source

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