Results 111 to 120 of about 70,499,433 (305)
Epitaxially Integrated Electro‐Optic KNbO3 Thin Films on Silicon
We demonstrate the first epitaxial integration of electro‐optic KNbO3 thin films on silicon using suboxide molecular‐beam epitaxy. Combining adsorption‐controlled molecular‐beam epitaxy, advanced characterization, and phase‐field modeling, we demonstrate phase‐pure crystalline films mirroring bulk crystals with robust Pockels response, enabling future ...
Sankalpa Hazra +17 more
wiley +1 more source
DESIGN OF A POLARIZATION-INDEPENDENT MMI SOI COUPLER BASED MICRORESONATOR USING SANDWICH STRUCTURES [PDF]
A microresonator based on multimode interference (MMI) couplers using sandwich structures is described in this paper. The birefringence can be controlled by introducing an additional dielectric layer within a silicon channel waveguide. It is shown that a
TRUNG-THANH LE
doaj
Radiative Thermal Management for Extreme Environments: Mechanisms and Design Strategies
In this review, we discuss the fundamental mechanisms of radiative cooling and solar heating, material and structural design strategies, hybrid approaches integrating additional heat transfer pathways, and durability‐oriented designs addressing environmental stresses.
Hyung Rae Kim +5 more
wiley +1 more source
Wideband characterization of SOI materials and devices
In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted. The extraction of electrical equivalent circuits for passive and active devices in silicon-on-insulator (SOI) technology is ...
Raskin, Jean-Pierre +1 more
core +1 more source
Self‐invalidating multilayer physical unclonable functions (PUFs) integrate fingerprint‐like metal nanopattern bilayers from block copolymer templates with highly reactive reduced graphene oxide (rGO) interlayers. This tamper‐responsive architecture blocks all unauthorized physical and chemical replication attempts while autonomously deactivating ...
Gyu Hui Jo +7 more
wiley +1 more source
GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as
Yang H +7 more
core
Sub‐nm2 Ferroelectric Domains via Charged 180° Walls in ZrO2
Ferroelectric ZrO2${\rm ZrO}_2$ thin films host closely spaced charged 180∘$^{\circ }$ domain walls that vertically compress polar domains beyond their lateral half‐unit‐cell limit. These head‐to‐head and tail‐to‐tail walls show distinct bulk‐like structures, natural oxygen‐mediated stabilization, and highly asymmetric mobility, highlighting new ...
Nashrah Afroze +33 more
wiley +1 more source
Charge carrier injection and trapping in the buried oxides of SOI structures
The electron injection processes in the silicon-on-insulator (SOI) devices affect strongly the reliability of device operation [1]. Usually the buried oxide (BOX)/silicon film interface shows worse structural and electrical properties than that of the ...
Nazarov, Alexei +3 more
core
Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate [PDF]
Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film.
Pain, Bedabrata, Zheng, Xinyu
core
We report perovskite photodetectors with record specific detectivities exceeding 1013 Jones with a novel molecular design strategy to functionalize self‐assembled monolayers (SAMs) with ferrocene (Fc) derivatives. Fc‐SAM‐based devices also exhibit strong operational stability and enable data transmission rates exceeding 1 Mbps in a LiFi system ...
Edoardo Angela +10 more
wiley +1 more source

